N. Sukhaseum, B. Vandevelde, L. Salvy, G. Augustin, A. Varotsou, N. Chatry, M. Tali, F. Bezerra, R. Ecoffet, C. B. Polo
{"title":"JUICE任务中电子诱发SEE的风险评估","authors":"N. Sukhaseum, B. Vandevelde, L. Salvy, G. Augustin, A. Varotsou, N. Chatry, M. Tali, F. Bezerra, R. Ecoffet, C. B. Polo","doi":"10.1109/RADECS45761.2018.9328721","DOIUrl":null,"url":null,"abstract":"The SEE sensitivity of electronic devices to high energy electrons has been put in evidence experimentally. Several ground experiments have shown that electron induced SEE could occur in recent technologies. In the case of the JUICE mission, the expected electron environment is harsher than for Earth orbits. The impact of such electron fluxes on the embedded electronics was assessed in this work. The study focused on SRAM memories SEU sensitivity. Three different device references were tested under electrons, as well as under protons and heavy ions. The electron and the low energy proton direct ionization contributions to the total SEU rate have been studied in more detail.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"482 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Risk Assessment of Electron Induced SEE during the JUICE Mission\",\"authors\":\"N. Sukhaseum, B. Vandevelde, L. Salvy, G. Augustin, A. Varotsou, N. Chatry, M. Tali, F. Bezerra, R. Ecoffet, C. B. Polo\",\"doi\":\"10.1109/RADECS45761.2018.9328721\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The SEE sensitivity of electronic devices to high energy electrons has been put in evidence experimentally. Several ground experiments have shown that electron induced SEE could occur in recent technologies. In the case of the JUICE mission, the expected electron environment is harsher than for Earth orbits. The impact of such electron fluxes on the embedded electronics was assessed in this work. The study focused on SRAM memories SEU sensitivity. Three different device references were tested under electrons, as well as under protons and heavy ions. The electron and the low energy proton direct ionization contributions to the total SEU rate have been studied in more detail.\",\"PeriodicalId\":248855,\"journal\":{\"name\":\"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"482 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS45761.2018.9328721\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS45761.2018.9328721","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Risk Assessment of Electron Induced SEE during the JUICE Mission
The SEE sensitivity of electronic devices to high energy electrons has been put in evidence experimentally. Several ground experiments have shown that electron induced SEE could occur in recent technologies. In the case of the JUICE mission, the expected electron environment is harsher than for Earth orbits. The impact of such electron fluxes on the embedded electronics was assessed in this work. The study focused on SRAM memories SEU sensitivity. Three different device references were tested under electrons, as well as under protons and heavy ions. The electron and the low energy proton direct ionization contributions to the total SEU rate have been studied in more detail.