Implementation of an OES System to Detect Silane Bursting During HDP SiN Film Deposition

A new fault detection data model was developed for High Density Plasma (HDP) SiN deposition processing to detect copper migration caused by silane (SiH4) introduction into the chamber prior to the deposition step. Before the development of this model, copper (Cu) migration could not be detected until electrical test. Potential product exposure was high due to the elapsed time between occurrence and detection. The model provides an automated detection system, reducing the magnitude of product exposure from repeat instances of silane bursting.