J. B. Boos, W. Kruppa, Doe Park, B. Molnar, R. Bass, M. Goldenberg, B. R. Bennett, J. Mittereder
{"title":"AlSb/InAs hemt的Pd/Pt/Au和AuGe/Ni/Pt/Au欧姆触点","authors":"J. B. Boos, W. Kruppa, Doe Park, B. Molnar, R. Bass, M. Goldenberg, B. R. Bennett, J. Mittereder","doi":"10.1109/ICIPRM.1996.492255","DOIUrl":null,"url":null,"abstract":"We report on the fabrication and characteristics of Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contact metalizations for AlSb/InAs HEMTs. For the AuGe/Ni/Pt/Au contact, a contact resistance of 0.11 /spl Omega/-mm was achieved using a 300/spl deg/C rapid thermal anneal. Auger depth profiling revealed considerable Au in-diffusion. Using this contact, 0.2 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.61 /spl Omega/-mm and a transconductance of 1.3 S/mm. For the Pd/Pt/Au contact, a contact resistance of 0.08 /spl Omega/-mm was achieved using a 175/spl deg/C hot plate heat treatment. Auger depth profiling revealed that the diffusion of the Pd/Pt/Au contact is significantly less than that of the AuGe/Ni/Pt/Au contact. Using the Pd/Pt/Au contact, 0.5 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.47 /spl Omega/-mm.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contacts for AlSb/InAs HEMTs\",\"authors\":\"J. B. Boos, W. Kruppa, Doe Park, B. Molnar, R. Bass, M. Goldenberg, B. R. Bennett, J. Mittereder\",\"doi\":\"10.1109/ICIPRM.1996.492255\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the fabrication and characteristics of Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contact metalizations for AlSb/InAs HEMTs. For the AuGe/Ni/Pt/Au contact, a contact resistance of 0.11 /spl Omega/-mm was achieved using a 300/spl deg/C rapid thermal anneal. Auger depth profiling revealed considerable Au in-diffusion. Using this contact, 0.2 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.61 /spl Omega/-mm and a transconductance of 1.3 S/mm. For the Pd/Pt/Au contact, a contact resistance of 0.08 /spl Omega/-mm was achieved using a 175/spl deg/C hot plate heat treatment. Auger depth profiling revealed that the diffusion of the Pd/Pt/Au contact is significantly less than that of the AuGe/Ni/Pt/Au contact. Using the Pd/Pt/Au contact, 0.5 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.47 /spl Omega/-mm.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.492255\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492255","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contacts for AlSb/InAs HEMTs
We report on the fabrication and characteristics of Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contact metalizations for AlSb/InAs HEMTs. For the AuGe/Ni/Pt/Au contact, a contact resistance of 0.11 /spl Omega/-mm was achieved using a 300/spl deg/C rapid thermal anneal. Auger depth profiling revealed considerable Au in-diffusion. Using this contact, 0.2 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.61 /spl Omega/-mm and a transconductance of 1.3 S/mm. For the Pd/Pt/Au contact, a contact resistance of 0.08 /spl Omega/-mm was achieved using a 175/spl deg/C hot plate heat treatment. Auger depth profiling revealed that the diffusion of the Pd/Pt/Au contact is significantly less than that of the AuGe/Ni/Pt/Au contact. Using the Pd/Pt/Au contact, 0.5 /spl mu/m gate-length AlSb/InAs HEMTs were fabricated which exhibit a low-field source-drain resistance of 0.47 /spl Omega/-mm.
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