90纳米数字单事件瞬态脉冲宽度测量

R. Lawrence, J. Ross, Neil E. Wood
{"title":"90纳米数字单事件瞬态脉冲宽度测量","authors":"R. Lawrence, J. Ross, Neil E. Wood","doi":"10.1109/REDW.2010.5619492","DOIUrl":null,"url":null,"abstract":"Single event transient (SET) pulsewidth measurements were made on 9SF 90 nm shift registers built with temporal delay latches on epitaxial substrates. Data was gathered using heavy ions from LETs of 9.75 to 58.78 (MeV-cm2)/mg.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"90-nm Digital Single Event Transient Pulsewidth Measurements\",\"authors\":\"R. Lawrence, J. Ross, Neil E. Wood\",\"doi\":\"10.1109/REDW.2010.5619492\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single event transient (SET) pulsewidth measurements were made on 9SF 90 nm shift registers built with temporal delay latches on epitaxial substrates. Data was gathered using heavy ions from LETs of 9.75 to 58.78 (MeV-cm2)/mg.\",\"PeriodicalId\":278033,\"journal\":{\"name\":\"2010 IEEE Radiation Effects Data Workshop\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Radiation Effects Data Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW.2010.5619492\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radiation Effects Data Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2010.5619492","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

单事件瞬态(SET)脉宽测量是在外延衬底上用时间延迟锁存器构建的9SF 90 nm移位寄存器上进行的。数据采集使用的重离子let值为9.75 ~ 58.78 (MeV-cm2)/mg。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
90-nm Digital Single Event Transient Pulsewidth Measurements
Single event transient (SET) pulsewidth measurements were made on 9SF 90 nm shift registers built with temporal delay latches on epitaxial substrates. Data was gathered using heavy ions from LETs of 9.75 to 58.78 (MeV-cm2)/mg.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Cross Comparison Guide for Results of Neutron SEE Testing of Microelectronics Applicable to Avionics Radiation Testing a Very Low-Noise RHBD ASIC Electrometer TID and SEE Responses of Rad-Hardened A/D Converters Commercially Designed and Manufactured SDRAM SEE Data Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1