基于130nm SiGe BiCMOS技术的73.9-83.5GHz合成器，相位噪声为- 111dBc/Hz，偏移量为10MHz

2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2013-06-02 DOI:10.1109/RFIC.2013.6569539

J. Plouchart, M. Ferriss, B. Sadhu, M. Sanduleanu, B. Parker, S. Reynolds

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引用次数: 23

摘要

采用130纳米SiGe BiCMOS技术实现73.9-83.5 GHz合成器。82.4GHz载波在10KHz和10MHz偏置时的相位噪声测量值分别为-88.5dBc/Hz和-111dBc/Hz。参考杂散为-67 dBc。该合成器集成了SoC应用的稳压器和电源管理;1.5 V和2.7 V电源功耗为0.51 W，尺寸为0.85 mm × 2.9 mm。

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A 73.9–83.5GHz synthesizer with −111dBc/Hz phase noise at 10MHz offset in a 130nm SiGe BiCMOS technology

A 73.9-83.5 GHz synthesizer is implemented in a 130nm SiGe BiCMOS technology. The measured phase noise at 10KHz and 10MHz offset of the 82.4GHz carrier are -88.5dBc/Hz and -111dBc/Hz respectively. Reference spurs are -67 dBc. The synthesizer integrates voltage regulators and power management for SoC applications; it consumes 0.51 W from 1.5 V and 2.7 V supplies, and occupies 0.85 mm × 2.9 mm.

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2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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