锗激光器用于近红外和中红外

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874659

J. Michel, Yan Cai, Zhaohong Han, Lin Zhang, Wei Yu, L. Kimerling

{"title":"锗激光器用于近红外和中红外","authors":"J. Michel, Yan Cai, Zhaohong Han, Lin Zhang, Wei Yu, L. Kimerling","doi":"10.1109/ISTDM.2014.6874659","DOIUrl":null,"url":null,"abstract":"Ge lasers, monolithically integrated on a Si CMOS platform, offer great potential for future on-chip photonic systems. In addition, the wide gain spectrum opens the possibility for inexpensive tunable lasers in the near- and mid-IR.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Germanium lasers for the near and mid IR\",\"authors\":\"J. Michel, Yan Cai, Zhaohong Han, Lin Zhang, Wei Yu, L. Kimerling\",\"doi\":\"10.1109/ISTDM.2014.6874659\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ge lasers, monolithically integrated on a Si CMOS platform, offer great potential for future on-chip photonic systems. In addition, the wide gain spectrum opens the possibility for inexpensive tunable lasers in the near- and mid-IR.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874659\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

Ge激光器，单片集成在硅CMOS平台上，为未来的片上光子系统提供了巨大的潜力。此外，宽增益谱开启了在近红外和中红外廉价可调谐激光器的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Germanium lasers for the near and mid IR

Ge lasers, monolithically integrated on a Si CMOS platform, offer great potential for future on-chip photonic systems. In addition, the wide gain spectrum opens the possibility for inexpensive tunable lasers in the near- and mid-IR.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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