Two Dimensional Band Gap Engineering in III-V Compounds Semiconductors: Aplications to Quantum Wire Structures and Devices.

Two dimensional band gap modulation in GaAs-AlGaAs structures grown by MBE is demonstrated using several approaches. In the first method a tilted superlattice (TSL) having interface planes tilted with respect to the substrate surface is directly grown by MBE. The growth process and the growth kinetics will be described in detail. The luminescence properties of undoped quantum wells grown by the TSL method will be reported. This method has been used to produce directly by MBE quantum wire superlattices which show the effects of the 2 dimensional carrier confinement in their polarization excited luminescence spectra. These effects will be described and compared to theory. Finally, we will describe the luminescence characteristics of quantum wire and quantum box dense arrays produced by Focused Ion Beam enhanced interdiffusion in GaAs-AlAs quantum well structures. Applications of these various structures to optoelectronic devices will be discussed.