5G射频和毫米波功率放大器的多尔蒂技术

P. Reynaert, Yuhe Cao, M. Vigilante, P. Indirayanti
{"title":"5G射频和毫米波功率放大器的多尔蒂技术","authors":"P. Reynaert, Yuhe Cao, M. Vigilante, P. Indirayanti","doi":"10.1109/vlsi-dat.2016.7482588","DOIUrl":null,"url":null,"abstract":"5G poses severe challenges to PA design. In the first place, output power and efficiency are of prime importance because of battery lifetime. The tradeoff between linear output power and efficiency is typically challenged by the high PAPR due to QAM modulation and/or OFDM techniques. But this important trade-off is challenged even more in 5G due to the high bandwidth requirements. Furthermore, the shift to higher frequencies, where more unused spectrum is available, also puts a burden on the overall PA architecture.","PeriodicalId":441941,"journal":{"name":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Doherty techniques for 5G RF and mm-wave power amplifiers\",\"authors\":\"P. Reynaert, Yuhe Cao, M. Vigilante, P. Indirayanti\",\"doi\":\"10.1109/vlsi-dat.2016.7482588\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"5G poses severe challenges to PA design. In the first place, output power and efficiency are of prime importance because of battery lifetime. The tradeoff between linear output power and efficiency is typically challenged by the high PAPR due to QAM modulation and/or OFDM techniques. But this important trade-off is challenged even more in 5G due to the high bandwidth requirements. Furthermore, the shift to higher frequencies, where more unused spectrum is available, also puts a burden on the overall PA architecture.\",\"PeriodicalId\":441941,\"journal\":{\"name\":\"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsi-dat.2016.7482588\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsi-dat.2016.7482588","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

5G对PA设计提出了严峻的挑战。首先,由于电池的寿命,输出功率和效率是最重要的。由于QAM调制和/或OFDM技术,线性输出功率和效率之间的权衡通常受到高PAPR的挑战。但由于带宽要求高,这种重要的权衡在5G中受到了更大的挑战。此外,向更高频率的转换,其中更多的未使用频谱可用,也给整个PA架构带来负担。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Doherty techniques for 5G RF and mm-wave power amplifiers
5G poses severe challenges to PA design. In the first place, output power and efficiency are of prime importance because of battery lifetime. The tradeoff between linear output power and efficiency is typically challenged by the high PAPR due to QAM modulation and/or OFDM techniques. But this important trade-off is challenged even more in 5G due to the high bandwidth requirements. Furthermore, the shift to higher frequencies, where more unused spectrum is available, also puts a burden on the overall PA architecture.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
RF performance of passive components on state-of-art trap rich silicon-on-insulator substrates Transient control of resistive random access memory for high speed and high endurance performance Advanced metrology and inspection solutions for a 3D world High-gain, low-voltage BEOL logic gate inverter built with film profile engineered IGZO transistors Oxygen chemical potential profile optimization for fast low current (<10μA) resistive switching in oxide-based RRAM
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1