纳米探针中电阻性开放缺陷隔离

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI:10.31399/asm.cp.istfa2021p0241

Yunfei Wang, H. Ryu, T. Tong

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摘要

在本文中，我们介绍了使用各种FA技术定位电阻性开放缺陷的案例研究，包括双端IV，双端电子束吸收电流(EBAC)，电子束感应电阻变化(EBIRCh)，脉冲IV，电容电压(CV)和扫描电容显微镜(SCM)。每种技术的优点和局限性也将被讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Resistive Open Defect Isolation in Nano-Probing

In this paper, we present case studies of localizing resistive open defects using various FA techniques, including two-terminal IV, two-terminal Electron-Beam Absorbed Current (EBAC), Electron Beam Induced Resistance Change (EBIRCh), Pulsed IV, Capacitance-Voltage (CV) and Scanning Capacitance Microscopy (SCM). The advantage and limitation of each technique will also be discussed.

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ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis

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