基于28nm CMOS技术设计的多ghz lvco的比较研究

Evan K. Jorgensen, P. R. Mukund
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引用次数: 1

摘要

采用GlobalFoundries 28nm HPP CMOS技术设计了4个多GHz lcvco: 15 GHz变容调谐NMOS-only、9 GHz变容调谐自偏置CMOS、14.2 GHz数字调谐NMOS-only和8.2 GHz数字调谐自偏置CMOS。作为一种设计方法,在MATLAB中使用描述调谐范围、槽幅约束和启动条件的解析表达式,以最大变容电容为y轴,NMOS晶体管宽度为x轴,输出纯NMOS和CMOS lcvco设计空间的图形视图。并对相位噪声进行了预测。除了标准变容管控制电压调谐方法外,还介绍了NMOS和CMOS lcvco的数字调谐实现。对所有设计的lcvco的性能进行了比较。变容管调谐和数字调谐NMOS lcvco都比两种CMOS拓扑结构具有更低的相位噪声、更低的功耗和更高的调谐范围。变容管调谐NMOS LCVCO在距15 GHz中心频率1 MHz偏移时的相位噪声最低,为-97 dBc/Hz, FOM为-172.20 dBc/Hz, FOM为-167.76 dBc/Hz。数字调谐CMOS LCVCO在10%的调谐范围内具有最大的调谐范围。与变容管调谐CMOS相比,数字调谐CMOS拓扑可将相位噪声提高3 dBc/Hz。
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A comparative study of multi-GHz LCVCOs designed in 28nm CMOS technology
Four multi-GHz LCVCOs were designed in the GlobalFoundries 28 nm HPP CMOS technology: 15 GHz varactor-tuned NMOS-only, 9 GHz varactor-tuned self-biased CMOS, 14.2 GHz digitally-tuned NMOS-only, and 8.2 GHz digitally-tuned self-biased CMOS. As a design method, analytical expressions describing tuning range, tank amplitude constraint, and startup condition were used in MATLAB to output a graphical view of the design space for both NMOS-only and CMOS LCVCOs, with maximum varactor capacitance on the y-axis and NMOS transistor width on the x-axis. Phase noise was predicted as well. In addition to the standard varactor control voltage tuning method, digitally-tuned implementations of both NMOS and CMOS LCVCOs are presented. The performance aspects of all designed LCVCOs are compared. Both varactor-tuned and digitally-tuned NMOS LCVCOs have lower phase noise, lower power consumption, and higher tuning range than both CMOS topologies. The varactor-tuned NMOS LCVCO has the lowest phase noise of -97 dBc/Hz at 1 MHz offset from 15 GHz center frequency, FOM of -172.20 dBc/Hz, and FOMT of -167.76 dBc/Hz. The digitally-tuned CMOS LCVCO has the greatest tuning range at 10%. Phase noise is improved by 3 dBc/Hz with the digitally-tuned CMOS topology over varactor-tuned CMOS.
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