{"title":"基于22nm FDSOI CMOS的高线性d波段宽带下变频混频器","authors":"Kaan Balaban, Matthias Möck, A. Ulusoy","doi":"10.1109/SiRF56960.2023.10046276","DOIUrl":null,"url":null,"abstract":"This paper presents the design and experimental characterization of a D-band down-conversion mixer in 22-nm FDSOI CMOS technology, which exhibits a conversion gain of 1 to 4 dB within a frequency range of115 to 165 GHz, when driven with an LO power of 3.5 dBm. Further, the passive architecture presents a good out-of-band rejection, with a 3-dB bandwidth of 500 MHz within the entire operating frequency range. The downconversion mixer exhibits an input 1-dB compression point of -5.2dBm measured with an LO power of -19dBm at the center frequency of 140 GHz.","PeriodicalId":354948,"journal":{"name":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Highly Linear D-Band Broadband Down Conversion Mixer in 22-nm FDSOI CMOS\",\"authors\":\"Kaan Balaban, Matthias Möck, A. Ulusoy\",\"doi\":\"10.1109/SiRF56960.2023.10046276\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and experimental characterization of a D-band down-conversion mixer in 22-nm FDSOI CMOS technology, which exhibits a conversion gain of 1 to 4 dB within a frequency range of115 to 165 GHz, when driven with an LO power of 3.5 dBm. Further, the passive architecture presents a good out-of-band rejection, with a 3-dB bandwidth of 500 MHz within the entire operating frequency range. The downconversion mixer exhibits an input 1-dB compression point of -5.2dBm measured with an LO power of -19dBm at the center frequency of 140 GHz.\",\"PeriodicalId\":354948,\"journal\":{\"name\":\"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SiRF56960.2023.10046276\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF56960.2023.10046276","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Highly Linear D-Band Broadband Down Conversion Mixer in 22-nm FDSOI CMOS
This paper presents the design and experimental characterization of a D-band down-conversion mixer in 22-nm FDSOI CMOS technology, which exhibits a conversion gain of 1 to 4 dB within a frequency range of115 to 165 GHz, when driven with an LO power of 3.5 dBm. Further, the passive architecture presents a good out-of-band rejection, with a 3-dB bandwidth of 500 MHz within the entire operating frequency range. The downconversion mixer exhibits an input 1-dB compression point of -5.2dBm measured with an LO power of -19dBm at the center frequency of 140 GHz.
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