多晶对cdte基太阳能电池器件特性的影响

Souvik Mukherjee, S. Farid, M. Stroscio, M. Dutta
{"title":"多晶对cdte基太阳能电池器件特性的影响","authors":"Souvik Mukherjee, S. Farid, M. Stroscio, M. Dutta","doi":"10.1109/IWCE.2015.7301976","DOIUrl":null,"url":null,"abstract":"There are mainly three different types of losses that accounts for the decrease in the efficiency of polycrystalline CdTe solar cells namely: (1) optical losses resulting from the interface reflections and absorption from the window and buffer layers in superstrate configuration; (2) recombination losses due to the interface between adjacent layers and also at grain boundaries; and (3) electrical losses due to the device series and shunt resistances. Over the years researchers have mostly studied the nature of the optical and electrical losses in single crystalline cells and have put forward various theoretical models to accurately explain their effect on various performance parameters. However the problem gets much complicated for polycrystalline materials as grain size effects can significantly affect these performance parameters such as short circuit current, open circuit voltage and fill factor. In this work we have studied these polycrystalline effects in depth and have presented a comparative analysis using minority carrier lifetime based model to accurately formulate micron scale grain size effects in CdTe based solar cells.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Modeling polycrystalline effects on the device characteristics of cdte based solar cells\",\"authors\":\"Souvik Mukherjee, S. Farid, M. Stroscio, M. Dutta\",\"doi\":\"10.1109/IWCE.2015.7301976\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There are mainly three different types of losses that accounts for the decrease in the efficiency of polycrystalline CdTe solar cells namely: (1) optical losses resulting from the interface reflections and absorption from the window and buffer layers in superstrate configuration; (2) recombination losses due to the interface between adjacent layers and also at grain boundaries; and (3) electrical losses due to the device series and shunt resistances. Over the years researchers have mostly studied the nature of the optical and electrical losses in single crystalline cells and have put forward various theoretical models to accurately explain their effect on various performance parameters. However the problem gets much complicated for polycrystalline materials as grain size effects can significantly affect these performance parameters such as short circuit current, open circuit voltage and fill factor. In this work we have studied these polycrystalline effects in depth and have presented a comparative analysis using minority carrier lifetime based model to accurately formulate micron scale grain size effects in CdTe based solar cells.\",\"PeriodicalId\":165023,\"journal\":{\"name\":\"2015 International Workshop on Computational Electronics (IWCE)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Workshop on Computational Electronics (IWCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2015.7301976\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Workshop on Computational Electronics (IWCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2015.7301976","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

造成多晶CdTe太阳能电池效率下降的损耗主要有三种,即:(1)叠层结构中窗口层和缓冲层的界面反射和吸收造成的光学损耗;(2)相邻层间界面和晶界处的复合损失;(3)由于器件串联和分流电阻造成的电损耗。多年来,研究人员主要研究单晶电池的光学和电损耗的性质,并提出了各种理论模型来准确解释它们对各种性能参数的影响。然而,对于多晶材料来说,晶粒尺寸效应会对短路电流、开路电压和填充系数等性能参数产生显著影响,因此问题就变得复杂起来。在这项工作中,我们深入研究了这些多晶效应,并使用基于少数载流子寿命的模型进行了比较分析,以准确地表达CdTe基太阳能电池中的微米尺度晶粒尺寸效应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Modeling polycrystalline effects on the device characteristics of cdte based solar cells
There are mainly three different types of losses that accounts for the decrease in the efficiency of polycrystalline CdTe solar cells namely: (1) optical losses resulting from the interface reflections and absorption from the window and buffer layers in superstrate configuration; (2) recombination losses due to the interface between adjacent layers and also at grain boundaries; and (3) electrical losses due to the device series and shunt resistances. Over the years researchers have mostly studied the nature of the optical and electrical losses in single crystalline cells and have put forward various theoretical models to accurately explain their effect on various performance parameters. However the problem gets much complicated for polycrystalline materials as grain size effects can significantly affect these performance parameters such as short circuit current, open circuit voltage and fill factor. In this work we have studied these polycrystalline effects in depth and have presented a comparative analysis using minority carrier lifetime based model to accurately formulate micron scale grain size effects in CdTe based solar cells.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Thermionic escape in quantum well solar cell GaN/InGaN/GaN disk-in-wire light emitters: polar vs. nonpolar orientations Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs Multi-scale modeling of metal-CNT interfaces I-V curves for cylinders embedded in P3HT
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1