超级栅极的晶体管级优化

D. Kagaris, T. Haniotakis
{"title":"超级栅极的晶体管级优化","authors":"D. Kagaris, T. Haniotakis","doi":"10.1109/ISQED.2006.139","DOIUrl":null,"url":null,"abstract":"The chip area and delay in digital VLSI design depends on the number of transistors that are used for the logic gates involved. While the determination of a series-parallel implementation can be straightforward once a simplified expression of the function is available, this may not be an optimum solution. In the current paper an improved approach for determining a satisfactory solution for complex gates is presented. Experimental results demonstrate the efficiency of the approach","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Transistor-level optimization of supergates\",\"authors\":\"D. Kagaris, T. Haniotakis\",\"doi\":\"10.1109/ISQED.2006.139\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The chip area and delay in digital VLSI design depends on the number of transistors that are used for the logic gates involved. While the determination of a series-parallel implementation can be straightforward once a simplified expression of the function is available, this may not be an optimum solution. In the current paper an improved approach for determining a satisfactory solution for complex gates is presented. Experimental results demonstrate the efficiency of the approach\",\"PeriodicalId\":138839,\"journal\":{\"name\":\"7th International Symposium on Quality Electronic Design (ISQED'06)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"7th International Symposium on Quality Electronic Design (ISQED'06)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2006.139\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"7th International Symposium on Quality Electronic Design (ISQED'06)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2006.139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

数字VLSI设计中的芯片面积和延迟取决于所涉及的逻辑门所使用的晶体管数量。虽然一旦函数的简化表达式可用,就可以直接确定串并联实现,但这可能不是最佳解决方案。本文提出了一种确定复杂门的满意解的改进方法。实验结果证明了该方法的有效性
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Transistor-level optimization of supergates
The chip area and delay in digital VLSI design depends on the number of transistors that are used for the logic gates involved. While the determination of a series-parallel implementation can be straightforward once a simplified expression of the function is available, this may not be an optimum solution. In the current paper an improved approach for determining a satisfactory solution for complex gates is presented. Experimental results demonstrate the efficiency of the approach
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