M. Yoshimi, A. Nishiyama, M. Terauchi, O. Arisumi, A. Murakoshi, Y. Ushiku, S. Takeno, K. Suzuki
{"title":"抑制0.15 /spl mu/m soi - mosfet衬底浮子效应的带隙工程技术","authors":"M. Yoshimi, A. Nishiyama, M. Terauchi, O. Arisumi, A. Murakoshi, Y. Ushiku, S. Takeno, K. Suzuki","doi":"10.1109/SOI.1995.526470","DOIUrl":null,"url":null,"abstract":"The substrate floating effect is the most fundamental problem in SOI-MOSFETs. Conventional countermeasures, such as body-contact, LDD structure are accompanied by area penalty, Id degradation and other drawbacks. To suppress this effect, we have proposed the bandgap engineering method, in which a narrow bandgap material is formed in the source region. In this paper, an ideal structure for the bandgap engineering is discussed and actually achievable performance is estimated based on simulations and experiments for 0.15 /spl mu/m SOI-MOSFETs.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Bandgap engineering technology for suppressing the substrate-floating-effect in 0.15 /spl mu/m SOI-MOSFETs\",\"authors\":\"M. Yoshimi, A. Nishiyama, M. Terauchi, O. Arisumi, A. Murakoshi, Y. Ushiku, S. Takeno, K. Suzuki\",\"doi\":\"10.1109/SOI.1995.526470\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The substrate floating effect is the most fundamental problem in SOI-MOSFETs. Conventional countermeasures, such as body-contact, LDD structure are accompanied by area penalty, Id degradation and other drawbacks. To suppress this effect, we have proposed the bandgap engineering method, in which a narrow bandgap material is formed in the source region. In this paper, an ideal structure for the bandgap engineering is discussed and actually achievable performance is estimated based on simulations and experiments for 0.15 /spl mu/m SOI-MOSFETs.\",\"PeriodicalId\":149490,\"journal\":{\"name\":\"1995 IEEE International SOI Conference Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1995.526470\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
衬底浮动效应是soi - mosfet中最基本的问题。传统的对抗措施，如身体接触，LDD结构，伴随着区域罚分，Id退化和其他缺点。为了抑制这种影响，我们提出了带隙工程方法，即在源区形成窄带隙材料。本文讨论了一种理想的带隙工程结构，并根据0.15 /spl mu/m soi - mosfet的仿真和实验估计了实际可实现的性能。
Bandgap engineering technology for suppressing the substrate-floating-effect in 0.15 /spl mu/m SOI-MOSFETs
The substrate floating effect is the most fundamental problem in SOI-MOSFETs. Conventional countermeasures, such as body-contact, LDD structure are accompanied by area penalty, Id degradation and other drawbacks. To suppress this effect, we have proposed the bandgap engineering method, in which a narrow bandgap material is formed in the source region. In this paper, an ideal structure for the bandgap engineering is discussed and actually achievable performance is estimated based on simulations and experiments for 0.15 /spl mu/m SOI-MOSFETs.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
