冲击电离对InAlAs/InGaAs hemt侧化效应的影响

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492383

C. Berthelemot, P. Vigier, J. Dumas, A. Clei, R. Palla, J. Harmand

{"title":"冲击电离对InAlAs/InGaAs hemt侧化效应的影响","authors":"C. Berthelemot, P. Vigier, J. Dumas, A. Clei, R. Palla, J. Harmand","doi":"10.1109/ICIPRM.1996.492383","DOIUrl":null,"url":null,"abstract":"The InAlAs/lnGaAs HEMT is a key electron device used in optoelectronic integrated circuits (OEICs) operating in the 1.3 and 1.5 /spl mu/m optical wavelength ranges. But OEIC performances can be degraded by side gating effects associated with the HEMT. A side gate current is demonstrated to be due to a hole current induced by an impact ionization mechanism into the HEMT InGaAs channel and flowing through the InAlAs buffer layer.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Dependence of sidegating effect in InAlAs/InGaAs HEMTs upon impact ionization\",\"authors\":\"C. Berthelemot, P. Vigier, J. Dumas, A. Clei, R. Palla, J. Harmand\",\"doi\":\"10.1109/ICIPRM.1996.492383\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The InAlAs/lnGaAs HEMT is a key electron device used in optoelectronic integrated circuits (OEICs) operating in the 1.3 and 1.5 /spl mu/m optical wavelength ranges. But OEIC performances can be degraded by side gating effects associated with the HEMT. A side gate current is demonstrated to be due to a hole current induced by an impact ionization mechanism into the HEMT InGaAs channel and flowing through the InAlAs buffer layer.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.492383\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492383","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

InAlAs/lnGaAs HEMT是用于光电子集成电路(oeic)的关键电子器件，其工作波长范围为1.3和1.5 /spl mu/m。但是，与HEMT相关的侧门效应会降低OEIC的性能。侧栅电流被证明是由于撞击电离机制引起的空穴电流进入HEMT InGaAs通道并流经InAlAs缓冲层。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dependence of sidegating effect in InAlAs/InGaAs HEMTs upon impact ionization

The InAlAs/lnGaAs HEMT is a key electron device used in optoelectronic integrated circuits (OEICs) operating in the 1.3 and 1.5 /spl mu/m optical wavelength ranges. But OEIC performances can be degraded by side gating effects associated with the HEMT. A side gate current is demonstrated to be due to a hole current induced by an impact ionization mechanism into the HEMT InGaAs channel and flowing through the InAlAs buffer layer.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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