使用 32 纳米 CNFET 的模拟设备的性能评估与应用

Q4 Engineering Russian Microelectronics Pub Date : 2024-02-08 DOI:10.1134/s1063739723700683

S. K. Tripathi, Raju Patel, Deepak Agrawal, Manoj Singh Adhikari

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引用次数: 0

摘要

摘要碳纳米管已成为先进 CMOS 器件的主要材料。碳的直径对器件的特性以及使用 CNFET 创建电路有重大影响。与基于 CNFET 的数字设计相比，在模拟领域的设计中，电路特性随 CNT 直径的变化更为明显。本研究展示了 CNT 参数变化对灵活的模拟设备--差分电压电流传送器--的影响。此外，还研究了基于 CNFET 的仪表放大器的性能。为了展示所研究的内容，对 32 nm CNFET 进行了 HSPICE 仿真。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance Estimation and Application of Analog Device using 32 nm CNFET

Abstract

Carbon nanotubes have emerged as a major material for advanced CMOS devices. The diameter of the carbon has a significant impact on the device’s properties as well as the creation of circuits that use the CNFET. Variations in circuit characteristics with CNT diameter are more obvious in analog domain designs than in digital CNFET-based designs. The proposed study demonstrates the influence of CNT parameter change on a flexible analog device, the differential voltage current conveyor. The performance of a CNFET-based instrumentation amplifier is also studied. To show the studied, HSPICE simulations were done on 32 nm CNFETs.

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.