基于悬臂的 MEMS 开关可提高接触力

Q4 Engineering Russian Microelectronics Pub Date : 2024-02-08 DOI:10.1134/s1063739723700774

I. A. Belozerov, I. V. Uvarov

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引用次数: 0

摘要

摘要对于前景广阔的无线电电子系统来说，MEMS 开关具有重大意义，但由于微接触的可靠性较低，因此尚未得到广泛应用。开关产生的接触力小，导致接触电阻大且不稳定。通常通过使用形状复杂、面积较大的电极来增加接触力，但简单紧凑的结构更为可取。本研究提出了一种基于 50 微米长悬臂的开关。首次介绍了选择产品垂直尺寸的方法，从而将接触力提高到超过 100 μN 的值，这是触点可靠工作所必需的。试验样品已经制作完成并进行了测试，其性能特征与计算结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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MEMS Switch Based on a Cantilever with Increased Contact Force

Abstract

MEMS switches are of significant interest for promising radio-electronic systems, but have not yet found widespread use due to the low reliability of microcontacts. The switch develops a low contact force, which results in high and unstable contact resistance. The force is usually increased by using electrodes with complex shapes and large areas, but a simple and compact configuration is preferable. This study presents a switch based on a 50-µm-long cantilever. For the first time, a method for selecting the vertical dimensions of the product is described, increasing the contact force to values in excess of 100 μN, necessary for reliable operation of the contacts. Test samples are manufactured and tested, and the performance characteristics are compared with the calculation results.

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.