Conductivity Switching in Lateral Channels Based on MXene Ti3C2Tx

Abstract

At present, sandwich structures based on transition metal carbides or nitrides, MXenes, have demonstrated their unique properties in optics, electronics, and photonics. The formation of elements with neuromorphic properties is a promising trend. In this paper, the memristive effect in lateral structures based on Ti₃C₂T_x MXenes is considered. The control of the formation of several current states in the conductivity of a MXene channel depending on the applied potential difference is experimentally studied. The structure is a film of the MXene Ti₃C₂T_x composition deposited by solution deposition between the gold electrodes formed on the channel surface on a silicon substrate with silicon oxide 200 nm thick. The samples obtained are analyzed using atomic force microscopy and Raman spectroscopy. It is established that in these structures it is possible to form the given conductivity level, depending on the applied electric field. The observed change in the conductivity ratio is two orders of magnitude. Conductivity in structures based on MXene is determined by the trap states in the channel and persists for more than 5 min.