SINAD 模数转换器测试方法研究

Q4 Engineering Russian Microelectronics Pub Date : 2024-02-15 DOI:10.1134/s1063739723070132
M. N. Polunin, V. V. Losev, Yu. A. Chaplygin
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引用次数: 0

摘要

摘要--模数转换器(AIC)的运行基于压缩采样理论,只要输入信号是可压缩的,我们就可以用少量的报告来处理信号。因此,采集到的数据可能并不包含输入信号频谱的所有信息,而用于模数转换器(ADC)的估算信噪比和失真比(SINAD)的标准方法并不适用。本文提出了一种计算模数转换器 SINAD 的新技术。该技术的理念是选择白噪声参数,其功率等于模数转换器失真和噪声的功率。为了研究新技术的结果,对具有相同特性的 AIC 和参考 ADC 进行了数学建模。使用文献中介绍的技术和建议的方法对 AIC 的 SINAD 进行了评估。使用文献中介绍的技术和建议的技术计算 AIC 的 SINAD。计算 ADC 的 SINAD 以进行比较。新(建议)技术显示出稳定的结果:AIC 的 SINAD 与 ADC 的 SINAD 相吻合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Research on Testing Methods of SINAD Analog-to-Information Converters

Abstract

The operation of an analog-to-information converter (AIC) is based on the theory of compressed sampling, which allows us to process a signal with a small number of reports, provided that the input signal is compressible. As a result, the collected data may not have all the information about the spectrum of the input signal, and the standard method for estimating the signal-to-noise and distortion (SINAD) ratio used for an analog-to-digital converter (ADC) is not applicable. In this paper a new technique for calculating the SINAD of an AIC is presented. The idea of this technique is to select the parameters of white noise, the power of which is equal to the power of the distortion and noise of the AIC. To study the results of the new technique, mathematical modeling of the AIC and the reference ADC with the same characteristics is carried out. The SINAD of the AIC is evaluated using the techniques presented in the literature and the proposed method. The SINAD of the AIC is calculated using the techniques presented in the literature and the proposed technique. The SINAD of the ADC is calculated for comparison. The new (proposed) technique demonstrates a stable result: the SINAD of the AIC coincides with the SINAD of the ADC.

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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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