疲劳分析和估算微机械电容式加速度计敏感元件失效前的暴露循环次数

Q4 Engineering Russian Microelectronics Pub Date : 2024-02-15 DOI:10.1134/s1063739723070090
Ye Ko Ko Aung, B. M. Simonov, S. P. Timoshenkov
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引用次数: 0

摘要

摘要确保 MEMS 设备运行的可靠性是开发人员面临的最重要任务。由于 MEMS 设备的设计和材料多种多样,可能会出现各种故障机制。这些设备大多包含结构中的运动部件。所使用的结构材料的疲劳特性及其在长时间重复循环加载下的老化会导致失效,从而直接影响设备的可靠性。本文分析了硅制电容式微机械加速度计(MMA)夹层结构敏感元件(SE)在材料疲劳失效机理条件下的疲劳特性和可靠性。计算了发生失效的周期性暴露次数和 SE 的失效率。考虑了硅--SE 材料表面平面的晶体学取向。模拟结果表明,由硅制成的 MMA 的 SE 疲劳寿命足以满足一般应用的要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Fatigue Analysis and Estimation of the Number of Exposure Cycles until the Failure of the Sensitive Element of a Micromechanical Capacitive Accelerometer

Abstract

Ensuring the reliability of the functioning of MEMS devices is the most important task facing developers. Due to the variety of designs and materials used in MEMS devices, various failure mechanisms can occur. Most of these devices contain moving parts of the structure. The fatigue properties of the structural materials used and their aging under prolonged repetitive cyclic loading can lead to failure, which directly affects the reliability of the device. In this paper the fatigue properties and reliability of the sensitive element (SE) of a micromechanical accelerometer (MMA) sandwich structure of a capacitive type made of silicon under the conditions of the mechanism of fatigue failure of the material are analyzed. The number of cycles of periodic exposure for the occurrence of a failure and the failure rate of SEs are calculated. The crystallographic orientation of the surface plane of silicon—the SE material—is considered. The simulation results show that the fatigue life of SE of an MMA made of silicon can be sufficiently strong for general purpose applications.

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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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