利用并行计算技术建立基于晶闸管交叉棒的模拟脉冲神经网络仿真模型

Q4 Engineering Russian Microelectronics Pub Date : 2024-03-05 DOI:10.1134/s1063739723080024
A. Yu. Morozov, K. K. Abgaryan, D. L. Reviznikov
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引用次数: 0

摘要

摘要 研究了模式识别问题中基于记忆元件的模拟脉冲神经网络的仿真建模问题。通过仿真建模,我们可以在数学模型的层面上对网络进行配置,然后在运行过程中直接使用所获得的参数。网络模型是一个动态系统,可以由数万或数十万个常微分方程组成。因此,自然需要高效、并行地实现适当的仿真模型。开放式多处理(OpenMP)被用作并行计算的技术,因为它允许我们用各种编程语言轻松创建多线程应用程序。对并行化效率的评估是针对网络识别一组 5 幅 128×128 像素图像的训练过程建模问题,这一过程需要求解约 8 万个微分方程。在这个问题上,计算速度加快了 6 倍多。根据实验数据,忆阻器的工作特性是随机的,在高阻态和低阻态之间切换时,电流-电压特性(VAC)的散布就表明了这一点。考虑到这一特点,我们使用了带有区间参数的忆阻器模型,该模型给出了相关值的上限和下限,并将实验曲线包围在走廊中。在模拟整个模拟自学脉冲神经网络的运行时,每个训练周期的忆阻器参数都是从选定的区间中随机设置的。这种方法可以避免使用随机数学装置,从而进一步降低计算成本。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Simulation Modeling of an Analog Impulse Neural Network Based on a Memristor Crossbar Using Parallel Computing Technologies

Abstract

The issues of simulation modeling of an analog impulse neural network based on memristive elements in the problem of pattern recognition are studied. Simulation modeling allows us to configure the network at the level of a mathematical model, and subsequently use the obtained parameters directly in the process of operation. The network model is given as a dynamic system, which can consist of tens or hundreds of thousands of ordinary differential equations. Naturally, there is a need for an efficient and parallel implementation of an appropriate simulation model. Open multiprocessing (OpenMP) is used as the technology for parallelizing calculations, since it allows us to easily create multithreaded applications in various programming languages. The efficiency of parallelization is evaluated on the problem of modeling the process of training the network to recognize a set of five images of a size of 128 by 128 pixels, which leads to the solution of about 80 000 differential equations. In this problem, the calculations are accelerated by a factor of over six. According to the experimental data, the operating character of memristors is stochastic, as shown by the scatter in the current-voltage characteristics (VACs) when switching between high-resistance and low-resistance states. To take this feature into account, a memristor model with interval parameters is used, which gives upper and lower limits on the values of interest, and encloses the experimental curves in corridors. When simulating the operation of the entire analog self-learning impulse neural network, in each epoch of training, the parameters of the memristors are set randomly from the selected intervals. This approach makes it possible to dispense with the use of a stochastic mathematical apparatus, thereby further reducing computational costs.

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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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