用于检测材料缺陷的数字剪切仪

Q4 Engineering Russian Microelectronics Pub Date : 2024-03-21 DOI:10.1134/s106373972360019x
Z. T. Azamatov, V. E. Gaponov, A. A. Jeenbekov, A. B. Bakhromov
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引用次数: 0

摘要

摘要目前,快速发展的光学方法之一是数字式剪切干涉测量法(剪切成像法)。该方法的优点是:采用非接触方法获取数据;对所研究材料的形状和表面的依赖性较低;确定表面点的运动梯度,表现为干涉条纹图案的异常,这与变形区域有关。使用迈克尔逊干涉仪进行了获取剪切图的实验。测试了形成图像偏移的光学方案。提出并实施了用于数字剪切成像的紧凑型斑点干涉仪方案。实现了一种获取剪切图的软件算法。对该设备进行了测试,以确定圆形薄膜等样品的平面外变形。还进行了实验,以检测焊缝中不均匀变形区的缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Digital Shearograph for Detecting Defect in Materials

Abstract

Currently, one of the rapidly developing optical methods is the digital version of shear interferometry (shearography). The advantages of the method are: contactless method of obtaining data; low dependence on the shape and surface of the material being studied; determination of gradients of movements of surface points, manifested in the form of anomalies in the pattern of interference fringes, which are associated with areas of deformation. Experiments were carried out to obtain shearograms using a Michelson interferometer. An optical scheme for forming an image shift was tested. A scheme of a compact speckle interferometer for digital shearography has been proposed and implemented. A software algorithm for obtaining shearograms has been implemented. The device was tested to determine out-of-plane deformations on samples such as a round thin membrane. Experiments were carried out to detect defects in welds as zones with nonuniform deformation.

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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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