Z. T. Azamatov, V. E. Gaponov, A. A. Jeenbekov, A. B. Bakhromov
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Digital Shearograph for Detecting Defect in Materials
Abstract
Currently, one of the rapidly developing optical methods is the digital version of shear interferometry (shearography). The advantages of the method are: contactless method of obtaining data; low dependence on the shape and surface of the material being studied; determination of gradients of movements of surface points, manifested in the form of anomalies in the pattern of interference fringes, which are associated with areas of deformation. Experiments were carried out to obtain shearograms using a Michelson interferometer. An optical scheme for forming an image shift was tested. A scheme of a compact speckle interferometer for digital shearography has been proposed and implemented. A software algorithm for obtaining shearograms has been implemented. The device was tested to determine out-of-plane deformations on samples such as a round thin membrane. Experiments were carried out to detect defects in welds as zones with nonuniform deformation.
期刊介绍:
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.