植入 64Zn+ 离子并在高温下氧化的二氧化硅薄膜研究

V. V. Privezentsev, A. P. Sergeev, A. A. Firsov, V. S. Kulikauskas, V. V. Zatekin, E. P. Kirilenko, A. V. Goryachev, V. A. Kovalskiy
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引用次数: 0

摘要

摘要 本文介绍了在 20 和 120 keV 能量下用 5 × 1016 cm-2 剂量的 64Zn+ 离子植入 SiO2 薄膜,并在 400 至 800°C 温度范围内以 100°C 为步长等速氧化 1 小时的研究结果。利用卢瑟福反向散射和飞行时间二次离子质谱法研究了锌及其氧化物的概况。通过欧杰电子能谱和拉曼散射测定了锌的化学状态和薄膜的相组成。研究发现,在植入后,锌的分布在 20 纳米和 85 纳米深处有两个最大值,在 700°C 退火后,在 45 纳米深处有一个扩大的最大值。植入后,样品中形成了锌和氧化锌的混合物。在 700°C 退火后,样品中只形成了氧化锌相,其分布图在 45 纳米处有一个扩大的峰值。
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Study of SiO2 Films Implanted with 64Zn+ Ions and Oxidized at Elevated Temperatures

Abstract

The results of studying SiO2 films implanted with 64Zn+ ions with a dose of 5 × 1016 cm–2 at energies of 20 and 120 keV and isochronously oxidized for 1 h at temperatures from 400 to 800°C with a step of 100°C are presented. The profiles of Zn and its oxide are studied using Rutherford backscattering and time-of-flight secondary-ion mass spectrometry. The chemical state of zinc and the phase composition of the film are determined by Auger electron spectroscopy and Raman scattering. It is found that after implantation, the zinc distribution has two maxima at depths of 20 and 85 nm, and after annealing at 700°C there is a broadened maximum at a depth of 45 nm. After implantation, a mixture of Zn and ZnO phases is formed in the sample. After annealing at 700°C, only the ZnO phase is formed in the sample, the distribution profile of which has a broadened peak at 45 nm.

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来源期刊
CiteScore
0.90
自引率
25.00%
发文量
144
审稿时长
3-8 weeks
期刊介绍: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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