在基于卫星的量子密钥分发中利用信号中断实现密钥的顺时针最大化

Q4 Engineering Russian Microelectronics Pub Date : 2024-03-21 DOI:10.1134/s1063739723600164
E. Ivchenko, A. Chernov, A. Khmelev, V. Kurochkin
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引用次数: 0

摘要

摘要基于卫星的量子通信是在全球范围内安全共享数据的一项前景广阔的技术,因为量子态在自由空间链路上的传输衰减比光纤小得多。然而,有限的通信时间和动态的参数变化限制了密钥长度,为了最大限度地获得可能的最终密钥,必须选择有效的星地量子通信间隔划分。在此,我们提出了一种利用频率同步程序后获得的信噪比来最大化秘钥长度的独创的顺时针分析方法。为了验证我们的方法,我们对 Micius 卫星和 600 毫米孔径地面站之间的量子密钥分配协议进行了实验模拟,并增加了随机信道中断。结果表明,与处理全部噪声数据相比,所提出的顺时针方法增加了最终密钥长度。
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Blockwise Maximization of the Secret Key with Signal Breaks in Satellite-Based Quantum Key Distribution

Abstract

Satellite-based quantum communication is a promising technology for the secure worldwide sharing of data because quantum states are conveyed across free-space links with significantly less attenuation than optical fiber. However, the restricted communication time and dynamic parameter changes limit the secret key length, and to maximize the possible final key, an effective division of satellite-to-ground quantum communication at intervals must be chosen. Here, we present an original blockwise analysis for maximizing secret key length using the signal-to-noise ratio obtained after the frequency synchronization procedure. To validate our method, we perform an experimental simulation of the quantum key distribution protocol between the Micius satellite and the 600 mm aperture ground station with additional random channel breaks. As a result, the proposed blockwise method leads to an increase in the final key length compared to processing the full amount of noisy data.

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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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