D. S. Seregin, A. S. Vishnevskiy, D. A. Vorotyntsev, P. A. Mokrushev, K. A. Vorotilov
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引用次数: 0
摘要
摘要 在这项工作中,研究了溶剂类型和表面活性剂(致孔剂)对多孔甲基改性旋涂薄膜性能的影响。对所形成薄膜的缺陷性进行了定性评估。使用光谱椭偏仪、频率相关电容分析和孔隙度量法分析了薄膜的折射率、介电常数和孔隙度量特性。结果发现,薄膜特性与表面活性剂类型的关系比与溶剂类型的关系更为密切。使用分子量较高的非离子表面活性剂 Brij® 76 可获得最高的孔隙率值。同时,离子型表面活性剂 CTAB 的分子量较低,其孔隙率也与之相当。尽管孔隙率很高,但含有 CTAB 的成膜溶液样品并没有表现出较低的介电常数,这可能是由于其亲水性或孔源残留物造成的。介电常数 k ≈ 2.1 的最低值是由含有 Brij® 76 的成膜溶液制成的薄膜的典型值。使用其他致孔剂可使 k 值达到 ~2.3-2.4。
Effect of Surfactant and Solvent on the Pore Structure of Organosilica Glass Film
Abstract
In this work, the effects of solvent type and surfactant (porogen) on the properties of porous methyl-modified spin-on films were investigated. A qualitative assessment of the defectivity of the formed films was carried out. The refractive index, dielectric permittivity, and porosimetric properties of the films were analyzed using the method of spectral ellipsometry, frequency dependence of capacitance analysis, and porosimetry. It was found that the film properties depend more strongly on the surfactant type than on the solvent type. The highest porosity value is obtained with the use of nonionic surfactant Brij® 76, which has a higher molecular weight. At the same time, at lower molecular weight, the ionic surfactant CTAB provides comparable porosity. Despite the high porosity, samples from film-forming solutions containing CTAB do not exhibit a lower dielectric constant, which is presumably due to their hydrophilicity or porogen residue. The lowest value of the dielectric constant k ≈ 2.1 is typical for films made from film-forming solutions containing Brij® 76. The application of other porogens allows us to obtain a k value ~2.3–2.4.
期刊介绍:
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.