利用环境辅助控制优化量子系统的不连贯 GRAPE

Q4 Engineering Russian Microelectronics Pub Date : 2024-03-21 DOI:10.1134/s1063739723600784
V. Petruhanov, A. Pechen
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引用次数: 0

摘要

摘要 在这项工作中,我们回顾了开发和应用非相干版 GRAPE(梯度上升脉冲工程)方法的几项成果,以优化由相干和非相干控制驱动的开放量子系统。在非相干控制方法中,环境与相干场一起充当控制,退相干率一般随时间变化。对于一个量子比特,通过卡达诺方法求解一个三次方程,得到了密度矩阵演化的明确解析表达式。我们讨论了非相干 GRAPE 方法(inGRAPE)在开放式单量子比特和双量子比特系统的高保真门生成中的应用,以及底层控制景观的惊人特性,形成了两组景观--哈达玛门、C-NOT 门和 C-Z 门的平滑单峰景观,以及 T(或 π/8)门的更复杂的双峰景观。对于 qutrit,提供了一种环境辅助非相干控制公式,其去相干率随时间变化。
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Incoherent GRAPE for Optimization of Quantum Systems with Environmentally Assisted Control

Abstract

In this work, we review several results on development and application of incoherent version of GRAPE (Gradient Ascent Pulse Engineering) approach to optimization for open quantum systems driven by both coherent and incoherent controls. In the incoherent control approach, the environment serves as a control together with coherent field, and decoherence rates become generally time-dependent. For a qubit, explicit analytic expressions for evolution of the density matrix were obtained by solving a cubic equation via Cardano method. We discuss applications of incoherent GRAPE method (inGRAPE) to high fidelity gate generation for open one- and two-qubit systems and surprising properties of the underlying control landscapes, forming two groups — smooth single peak landscapes for Hadamard, C-NOT and C-Z gates, and more complicated with two peaks for T (or π/8) gate. For a qutrit, a formulation of the environment-assisted incoherent control with time-dependent decoherence rates is provided.

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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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