通过与谐振器混合耦合的约瑟夫森微ubits 阵列产生电磁脉冲

Q4 Engineering Russian Microelectronics Pub Date : 2024-03-21 DOI:10.1134/s1063739723600504
A. A. Semenov, A. M. Satanin
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引用次数: 0

摘要

摘要 研究了嵌入超导谐振器并通过电容和电感(电偶极子和磁偶极子相互作用)耦合到谐振器带的约瑟夫森量子比特阵列产生周期性电磁脉冲序列的问题。研究表明,在单模近似情况下,量子比特系统由广义的拉比-迪克模型描述。在密集的量子比特链和大量模式群的情况下,则使用准经典近似来描述电磁场和量子比特的集体激发(麦克斯韦-布洛赫方程)。研究表明,该系统可以产生电孤子和磁孤子以及它们的混合物。研究发现,在量子比特与谐振器对称耦合的情况下,会产生密集而稳定的孤子序列(列车)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Generator of Electromagnetic Pulses by an Array of Josephson Qubits with Hybrid Coupling to a Resonator

Abstract

The generation of a periodic sequence of electromagnetic pulses by an array of Josephson qubits imbedded in a superconducting resonator and coupled to the resonator strip by means of capacitors and inductors (electro-dipole and magneto-dipole interaction) is studied. It is shown that in a single-mode approximation, the system of qubits is described by a generalized Rabi–Dicke model. In the case of a dense chain of qubits and a large mode population, the quasi-classical approximation is used to describe the electromagnetic field and collective excitations of qubits (Maxwell–Bloch equations). It is shown that this system can generate electric and magnetic solitons, as well as their mixtures. It is found that in the case of symmetric coupling of qubits with a resonator, dense and stable sequences (trains) of solitons are generated.

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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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