用于纳米技术应用的静电辅助超声喷涂技术

Q4 Engineering Russian Microelectronics Pub Date : 2024-03-21 DOI:10.1134/s1063739723600681
V. Petukhov, N. Struchkov, V. Nevolin
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引用次数: 0

摘要

摘要 在这项工作中,我们展示了将光刻胶超声喷涂和静电辅助沉积到具有深度蚀刻区域的硅衬底上的设置和优化工艺。图中显示了外加电场下液滴尺寸的减小。FP-3515 光刻胶的沉积是在 45°C 的温度下进行的,具有良好的光刻胶转移性以及良好的薄膜清洁度和质量。光刻胶层的沉积和干燥是同时进行的,这意味着薄膜干燥均匀,因此不会产生机械应变。另一个优点是可以制作多层涂层,而不会部分溶解之前的沉积层。沉积的光阻层会在深蚀刻硅基板的边缘和壁面形成保形膜。无掩模激光光刻技术的成功应用证明了该工艺的实用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Electrostatic-Assisted Ultrasonic Spray-Coating for Nanotechnology Applications

Abstract

In this work we show a setup and optimized process of ultrasonic spray and electrostatic-assisted deposition of photoresist onto silicon substrates with deep etched areas. Drop size reduction at applied electric field is shown. The deposition of FP-3515 photoresist is conducted at a temperature of 45°C and provides good photoresist transfer and good film cleanness and quality. Deposition and drying of the photoresist layer is conducted simultaneously which implies uniform drying of the film and, thus, absence of mechanical strain. Another advantage is a possibility to create multi-layer coatings without partial dissolution of previously deposited layer. Deposited photoresist layer forms conformal film at edges and walls of deep etched silicon substrate. Maskless laser lithography has been conducted successfully that proved process practical suitability.

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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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