{"title":"带肖特基二极管的碳化硅超结 MOSFET 可提高短路和反向恢复的坚固性","authors":"Wei Cao, Sujie Yin, Xinglai Ge, Dong Liu","doi":"10.1016/j.micrna.2024.207847","DOIUrl":null,"url":null,"abstract":"<div><p>In this article, a novel SiC superjunction MOSFET with Schottky diode containing N- and P-type barrier is proposed to improving short-circuit and reverse recovery ruggedness, investigated by TCAD simulations. The adoption of superjunction and p-shields structure can reduce saturation current, and thus, improve short-circuit capability. A fine gate oxide providing long-term reliability of the device is obtained. Also, N-type Schottky diode for electrons is used to dampen bipolar conduction of the parasitic body diode, while P-type Schottky diode for holes is introduced to constrain the hole inflow and extraction attributed to the transient variation of the superjunction. As a result, compared with an SBD-wall-integrated trench MOSFET (SWITCH-MOS), a low on-resistance and high breakdown voltage of the proposed structure are gained. More importantly, the proposed device exhibits stronger temperature-dependent immunity. As expected, simulation results indicate that the proposed device under 10 nH stray inductance shows a 30%–50 % reduction in the peak reverse recovery current and a 50%–70 % decrease in the current rising slope of reverse recovery, compared to only a single superjunction, when the metal workfunction varies from 5.1 to 5.6 eV. Moreover, the short-circuit withstanding time of the proposed structure increases roughly 2 times longer than that of SWITCH-MOS.</p></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SiC superjunction MOSFET with Schottky diode for improving short-circuit and reverse recovery ruggedness\",\"authors\":\"Wei Cao, Sujie Yin, Xinglai Ge, Dong Liu\",\"doi\":\"10.1016/j.micrna.2024.207847\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this article, a novel SiC superjunction MOSFET with Schottky diode containing N- and P-type barrier is proposed to improving short-circuit and reverse recovery ruggedness, investigated by TCAD simulations. The adoption of superjunction and p-shields structure can reduce saturation current, and thus, improve short-circuit capability. A fine gate oxide providing long-term reliability of the device is obtained. Also, N-type Schottky diode for electrons is used to dampen bipolar conduction of the parasitic body diode, while P-type Schottky diode for holes is introduced to constrain the hole inflow and extraction attributed to the transient variation of the superjunction. As a result, compared with an SBD-wall-integrated trench MOSFET (SWITCH-MOS), a low on-resistance and high breakdown voltage of the proposed structure are gained. More importantly, the proposed device exhibits stronger temperature-dependent immunity. As expected, simulation results indicate that the proposed device under 10 nH stray inductance shows a 30%–50 % reduction in the peak reverse recovery current and a 50%–70 % decrease in the current rising slope of reverse recovery, compared to only a single superjunction, when the metal workfunction varies from 5.1 to 5.6 eV. Moreover, the short-circuit withstanding time of the proposed structure increases roughly 2 times longer than that of SWITCH-MOS.</p></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773012324000967\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012324000967","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
摘要
本文提出了一种新型碳化硅超结 MOSFET,带有包含 N 型和 P 型势垒的肖特基二极管,通过 TCAD 仿真研究了其短路和反向恢复的耐用性。采用超结和 p 型势垒结构可以降低饱和电流,从而提高短路能力。精细的栅极氧化物可确保器件的长期可靠性。此外,还采用了 N 型肖特基电子二极管来抑制寄生体二极管的双极性传导,同时引入了 P 型肖特基空穴二极管来限制空穴流入以及超结瞬态变化引起的空穴抽取。因此,与 SBD 壁式集成沟槽 MOSFET(SWITCH-MOS)相比,所提出的结构具有低导通电阻和高击穿电压。更重要的是,该器件具有更强的温度抗扰性。仿真结果表明,当金属功函数在 5.1 至 5.6 eV 之间变化时,与单超结相比,在 10 nH 杂散电感条件下的拟议器件的反向恢复峰值电流降低了 30% 至 50%,反向恢复电流上升斜率降低了 50% 至 70%。此外,拟议结构的短路耐受时间比 SWITCH-MOS 延长了约 2 倍。
SiC superjunction MOSFET with Schottky diode for improving short-circuit and reverse recovery ruggedness
In this article, a novel SiC superjunction MOSFET with Schottky diode containing N- and P-type barrier is proposed to improving short-circuit and reverse recovery ruggedness, investigated by TCAD simulations. The adoption of superjunction and p-shields structure can reduce saturation current, and thus, improve short-circuit capability. A fine gate oxide providing long-term reliability of the device is obtained. Also, N-type Schottky diode for electrons is used to dampen bipolar conduction of the parasitic body diode, while P-type Schottky diode for holes is introduced to constrain the hole inflow and extraction attributed to the transient variation of the superjunction. As a result, compared with an SBD-wall-integrated trench MOSFET (SWITCH-MOS), a low on-resistance and high breakdown voltage of the proposed structure are gained. More importantly, the proposed device exhibits stronger temperature-dependent immunity. As expected, simulation results indicate that the proposed device under 10 nH stray inductance shows a 30%–50 % reduction in the peak reverse recovery current and a 50%–70 % decrease in the current rising slope of reverse recovery, compared to only a single superjunction, when the metal workfunction varies from 5.1 to 5.6 eV. Moreover, the short-circuit withstanding time of the proposed structure increases roughly 2 times longer than that of SWITCH-MOS.