{"title":"反铁磁性石墨烯结中的光电控制晶体管和磁阻效应","authors":"Xiao-Long Lü, Ze-Han Hu, Zhen-Shu Hu, Jian-Ming Hu, Hui-Lin Huang, Yv-Nuo Qin","doi":"10.1016/j.micrna.2024.207866","DOIUrl":null,"url":null,"abstract":"<div><p>We investigate the optoelectronic spin and spin-valley transports and magnetoresistance (MR) effect in a graphene-based junction. The results show that by modulating the direction of an electric field, the off state and the on state with fully spin-polarized currents can be realized for both parallel (P) and antiparallel (AP) magnetization configurations, because the spin-polarized directions between two antiferromagnetic (AFM) regions are opposite and consistent, respectively. Moreover, when the off-resonant circularly polarized (ORCP) light is further radiated on two AFM regions, pure spin current can be further switched into four types of fully spin-valley-polarized currents, which results in an optoelectronically controlled transistor. In particular, the conductances in the P and AP magnetization configurations are either equal or dramatically different, so the optically and electrically controlled MR effect is naturally formed that can be switched from 0 to 1. Our results suggest that graphene has a very promising potential for applications in spintronics and spin-valleytronics.</p></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optoelectronically controlled transistor and magnetoresistance effect in an antiferromagnetic graphene-based junction\",\"authors\":\"Xiao-Long Lü, Ze-Han Hu, Zhen-Shu Hu, Jian-Ming Hu, Hui-Lin Huang, Yv-Nuo Qin\",\"doi\":\"10.1016/j.micrna.2024.207866\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We investigate the optoelectronic spin and spin-valley transports and magnetoresistance (MR) effect in a graphene-based junction. The results show that by modulating the direction of an electric field, the off state and the on state with fully spin-polarized currents can be realized for both parallel (P) and antiparallel (AP) magnetization configurations, because the spin-polarized directions between two antiferromagnetic (AFM) regions are opposite and consistent, respectively. Moreover, when the off-resonant circularly polarized (ORCP) light is further radiated on two AFM regions, pure spin current can be further switched into four types of fully spin-valley-polarized currents, which results in an optoelectronically controlled transistor. In particular, the conductances in the P and AP magnetization configurations are either equal or dramatically different, so the optically and electrically controlled MR effect is naturally formed that can be switched from 0 to 1. Our results suggest that graphene has a very promising potential for applications in spintronics and spin-valleytronics.</p></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773012324001158\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012324001158","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
摘要
我们研究了石墨烯结中的光电自旋和自旋隙传输以及磁阻(MR)效应。结果表明,通过调节电场方向,平行(P)磁化配置和反平行(AP)磁化配置都能实现具有完全自旋极化电流的关态和开态,因为两个反铁磁(AFM)区域之间的自旋极化方向分别相反且一致。此外,当偏离共振圆极化(ORCP)光进一步辐射到两个 AFM 区域时,纯自旋电流可进一步切换为四种完全自旋谷极化电流,从而形成光电控制晶体管。特别是在 P 磁化和 AP 磁化配置中,电导要么相等,要么大不相同,因此自然形成了可从 0 切换到 1 的光电控制 MR 效应。我们的研究结果表明,石墨烯在自旋电子学和自旋峡谷电子学中具有非常广阔的应用前景。
Optoelectronically controlled transistor and magnetoresistance effect in an antiferromagnetic graphene-based junction
We investigate the optoelectronic spin and spin-valley transports and magnetoresistance (MR) effect in a graphene-based junction. The results show that by modulating the direction of an electric field, the off state and the on state with fully spin-polarized currents can be realized for both parallel (P) and antiparallel (AP) magnetization configurations, because the spin-polarized directions between two antiferromagnetic (AFM) regions are opposite and consistent, respectively. Moreover, when the off-resonant circularly polarized (ORCP) light is further radiated on two AFM regions, pure spin current can be further switched into four types of fully spin-valley-polarized currents, which results in an optoelectronically controlled transistor. In particular, the conductances in the P and AP magnetization configurations are either equal or dramatically different, so the optically and electrically controlled MR effect is naturally formed that can be switched from 0 to 1. Our results suggest that graphene has a very promising potential for applications in spintronics and spin-valleytronics.