半导体和磁阻器件中的电子和自旋传输

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-05-23 DOI:10.1016/j.sse.2024.108962
Viktor Sverdlov , Siegfried Selberherr
{"title":"半导体和磁阻器件中的电子和自旋传输","authors":"Viktor Sverdlov ,&nbsp;Siegfried Selberherr","doi":"10.1016/j.sse.2024.108962","DOIUrl":null,"url":null,"abstract":"<div><p>As the scaling of CMOS-based technology shows signs of an imminent saturation, employing the second intrinsic electron characteristics – the electron spin – is attractive to further boost the performance of integrated circuits and to introduce new computational paradigms. The spin promises to offer an additional functionality to charge-based CMOS circuitry. Spin injection and spin manipulation by gate-induced electrics field at room temperatures were successfully demonstrated in semiconductor channels, expectations that such spin-driven devices appear in digital circuits to complement or even replace CMOS become credible.</p><p>On the memory side, the nonvolatile CMOS-compatible spin-transfer torque (STT) and the spin–orbit torque magnetoresistive random access memories (MRAMs) are already competing with flash memory and even SRAM for embedded applications.</p><p>To accurately model spin and charge transport and torques in magnetic tunnel junctions, we innovatively extend the spin and charge transport equations to multi-layered structures consisting of normal and ferromagnetic metal layers separated by tunnel barriers. We validate our approach by modeling the magnetization dynamics in ultra-scaled MRAM cells. A multi-bit operation is predicted in an MRAM cell with a composite free layer.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electron and spin transport in semiconductor and magnetoresistive devices\",\"authors\":\"Viktor Sverdlov ,&nbsp;Siegfried Selberherr\",\"doi\":\"10.1016/j.sse.2024.108962\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>As the scaling of CMOS-based technology shows signs of an imminent saturation, employing the second intrinsic electron characteristics – the electron spin – is attractive to further boost the performance of integrated circuits and to introduce new computational paradigms. The spin promises to offer an additional functionality to charge-based CMOS circuitry. Spin injection and spin manipulation by gate-induced electrics field at room temperatures were successfully demonstrated in semiconductor channels, expectations that such spin-driven devices appear in digital circuits to complement or even replace CMOS become credible.</p><p>On the memory side, the nonvolatile CMOS-compatible spin-transfer torque (STT) and the spin–orbit torque magnetoresistive random access memories (MRAMs) are already competing with flash memory and even SRAM for embedded applications.</p><p>To accurately model spin and charge transport and torques in magnetic tunnel junctions, we innovatively extend the spin and charge transport equations to multi-layered structures consisting of normal and ferromagnetic metal layers separated by tunnel barriers. We validate our approach by modeling the magnetization dynamics in ultra-scaled MRAM cells. A multi-bit operation is predicted in an MRAM cell with a composite free layer.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001114\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001114","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

由于基于 CMOS 技术的扩展显示出即将饱和的迹象,利用电子的第二种固有特性--电子自旋--来进一步提高集成电路的性能并引入新的计算范式具有很大的吸引力。自旋有望为基于电荷的 CMOS 电路提供额外的功能。自旋注入和通过栅极诱导电场在室温下操纵自旋在半导体通道中得到了成功的验证,人们期望在数字电路中出现这种自旋驱动的器件,以补充甚至取代 CMOS。在存储器方面,与 CMOS 兼容的非易失性自旋转移力矩(STT)和自旋轨道力矩磁阻随机存取存储器(MRAM)已经在嵌入式应用中与闪存甚至 SRAM 竞争。我们通过模拟超大规模 MRAM 单元中的磁化动态验证了我们的方法。我们预测了具有复合自由层的 MRAM 单元中的多比特操作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Electron and spin transport in semiconductor and magnetoresistive devices

As the scaling of CMOS-based technology shows signs of an imminent saturation, employing the second intrinsic electron characteristics – the electron spin – is attractive to further boost the performance of integrated circuits and to introduce new computational paradigms. The spin promises to offer an additional functionality to charge-based CMOS circuitry. Spin injection and spin manipulation by gate-induced electrics field at room temperatures were successfully demonstrated in semiconductor channels, expectations that such spin-driven devices appear in digital circuits to complement or even replace CMOS become credible.

On the memory side, the nonvolatile CMOS-compatible spin-transfer torque (STT) and the spin–orbit torque magnetoresistive random access memories (MRAMs) are already competing with flash memory and even SRAM for embedded applications.

To accurately model spin and charge transport and torques in magnetic tunnel junctions, we innovatively extend the spin and charge transport equations to multi-layered structures consisting of normal and ferromagnetic metal layers separated by tunnel barriers. We validate our approach by modeling the magnetization dynamics in ultra-scaled MRAM cells. A multi-bit operation is predicted in an MRAM cell with a composite free layer.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
期刊最新文献
Editorial Board Spiro-OMeTAD Anchoring perovskite for gradual homojunction in stable perovskite solar cells Influence of gate work function variations on characteristics of fin-shaped silicon quantum dot device with multi-gate under existence of gate electrostatic coupling Silicon-based integrated passive device stack for III-V/Si monolithic 3D circuits operating on RF band Sputter-Deposited copper iodide thin film transistors with low Operating voltage
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1