根据 SEPIC 拓扑构建的纹波 DC/DC 转换器

Q4 Engineering Russian Microelectronics Pub Date : 2024-06-04 DOI:10.1134/s1063739724600134
V. K. Bityukov, A. I. Lavrenov
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引用次数: 0

摘要

摘要 数学模型是计算和设计无线电电子设备的统一方法的基础。利用 SEPIC 拓扑建立的 DC/DC 转换器极限连续数学模型,我们可以估算流过电感器绕组的电流和电容器极板上的电压的变化范围,并确定各种转换器参数(如功率开关频率键、填充因子、元件值等)的最大值和最小值。研究结果表明,当功率开关的开关频率大于 200 kHz 时,数学模型的相位坐标趋向于变流器电流和电压的实际值。纹波范围的计算值与建模过程中获得的结果(随着电源开关占空比和开关频率的变化)之间建立了对应关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Ripple DC/DC Converter Built According to the SEPIC Topology

Abstract

Mathematical models are the base for unified methods of calculating and designing radio-electronic devices. The developed limiting continuous mathematical model of a DC/DC converter built using the SEPIC topology allows us to estimate the range of changes in currents flowing through the windings of the inductors and voltages on the capacitor plates, as well as determine their maximum and minimum values for various converter parameters, such as the power switching frequency key, fill factor, element values, etc. The research results show that the phase coordinates of the mathematical model tend to the real values of the currents and voltages of the converter when the switching frequency of the power switch is more than 200 kHz. A correspondence was established between the calculated values of the ripple ranges and the results obtained during modeling (with changes in the duty cycle and switching frequency of the power switch).

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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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