使用三种典型反应器对 InN-MOVPE 的气体反应路径进行数值研究

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-06-17 DOI:10.1016/j.jcrysgro.2024.127798
Guangyu Zheng , Yukang Sun , Hong Zhang , Peng Su , Ran Zuo , Lijun Liu
{"title":"使用三种典型反应器对 InN-MOVPE 的气体反应路径进行数值研究","authors":"Guangyu Zheng ,&nbsp;Yukang Sun ,&nbsp;Hong Zhang ,&nbsp;Peng Su ,&nbsp;Ran Zuo ,&nbsp;Lijun Liu","doi":"10.1016/j.jcrysgro.2024.127798","DOIUrl":null,"url":null,"abstract":"<div><p>This study investigates the controversies about the gas-phase reaction path in the InN MOVPE process. Numerical modeling of the reaction-transport processes in three typical reactors was conducted for main reaction paths. By comparisons of the molar concentrations of the major In-containing species, it was determined that the different approaches of the gas mixing and heating led to three distinct reaction paths. When the non-premixed gas precursors are heated very fast upon entering the reactor, the adduct/amide formation path predominates and the pyrolysis path is negligible (Path 1). When the precursors are mixed at room temperature and heated gradually, the adduct TMIn:NH<sub>3</sub> dissociates back into TMIn, with the pyrolysis path dominating. However, the formation of amides DMInNH<sub>2</sub> intensifies the generation of nanoparticles (Path 2). When mixing occurs at warm temperature and heated fast, both the pyrolysis and adduct paths co-exist, but their effects are different (path 3). In the CCS reactor the dominant reaction path will be Path 1, while in the vertical reactor with a greater height, Path 2 is predominant. In the pre-mixed horizontal reactor, Path 3 is dominant, the pyrolysis path forms a competition with the adduct path near the substrate, and the adduct path dominating at the top of the reactor.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical study on gas reaction path of InN-MOVPE with three typical reactors\",\"authors\":\"Guangyu Zheng ,&nbsp;Yukang Sun ,&nbsp;Hong Zhang ,&nbsp;Peng Su ,&nbsp;Ran Zuo ,&nbsp;Lijun Liu\",\"doi\":\"10.1016/j.jcrysgro.2024.127798\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This study investigates the controversies about the gas-phase reaction path in the InN MOVPE process. Numerical modeling of the reaction-transport processes in three typical reactors was conducted for main reaction paths. By comparisons of the molar concentrations of the major In-containing species, it was determined that the different approaches of the gas mixing and heating led to three distinct reaction paths. When the non-premixed gas precursors are heated very fast upon entering the reactor, the adduct/amide formation path predominates and the pyrolysis path is negligible (Path 1). When the precursors are mixed at room temperature and heated gradually, the adduct TMIn:NH<sub>3</sub> dissociates back into TMIn, with the pyrolysis path dominating. However, the formation of amides DMInNH<sub>2</sub> intensifies the generation of nanoparticles (Path 2). When mixing occurs at warm temperature and heated fast, both the pyrolysis and adduct paths co-exist, but their effects are different (path 3). In the CCS reactor the dominant reaction path will be Path 1, while in the vertical reactor with a greater height, Path 2 is predominant. In the pre-mixed horizontal reactor, Path 3 is dominant, the pyrolysis path forms a competition with the adduct path near the substrate, and the adduct path dominating at the top of the reactor.</p></div>\",\"PeriodicalId\":353,\"journal\":{\"name\":\"Journal of Crystal Growth\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Crystal Growth\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022024824002331\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824002331","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0

摘要

本研究调查了有关 InN MOVPE 工艺中气相反应路径的争议。针对主要反应路径,对三个典型反应器中的反应-传输过程进行了数值建模。通过比较主要含 In 物种的摩尔浓度,确定了不同的气体混合和加热方法会导致三种不同的反应路径。当未预混合的气体前驱体进入反应器后被快速加热时,加成物/酰胺的形成路径占主导地位,而热解路径可以忽略不计(路径 1)。当前驱体在室温下混合并逐渐加热时,加合物 TMIn:NH3 会解离回 TMIn,热解路径占主导地位。然而,酰胺 DMInNH2 的形成会加剧纳米粒子的生成(路径 2)。当在高温和快速加热条件下进行混合时,热解和加成途径同时存在,但它们的效果不同(途径 3)。在 CCS 反应器中,主要的反应路径是路径 1,而在高度较大的垂直反应器中,路径 2 是主要的。在预混合水平反应器中,路径 3 占主导地位,热解路径与基质附近的加成路径形成竞争,加成路径在反应器顶部占主导地位。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Numerical study on gas reaction path of InN-MOVPE with three typical reactors

This study investigates the controversies about the gas-phase reaction path in the InN MOVPE process. Numerical modeling of the reaction-transport processes in three typical reactors was conducted for main reaction paths. By comparisons of the molar concentrations of the major In-containing species, it was determined that the different approaches of the gas mixing and heating led to three distinct reaction paths. When the non-premixed gas precursors are heated very fast upon entering the reactor, the adduct/amide formation path predominates and the pyrolysis path is negligible (Path 1). When the precursors are mixed at room temperature and heated gradually, the adduct TMIn:NH3 dissociates back into TMIn, with the pyrolysis path dominating. However, the formation of amides DMInNH2 intensifies the generation of nanoparticles (Path 2). When mixing occurs at warm temperature and heated fast, both the pyrolysis and adduct paths co-exist, but their effects are different (path 3). In the CCS reactor the dominant reaction path will be Path 1, while in the vertical reactor with a greater height, Path 2 is predominant. In the pre-mixed horizontal reactor, Path 3 is dominant, the pyrolysis path forms a competition with the adduct path near the substrate, and the adduct path dominating at the top of the reactor.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
期刊最新文献
Performance improvement of 1.3 μm InAlGaAs MQW modulators grown by MOVPE using C-doped InAl(Ga)As cladding layers PdSe2 single crystals synthesized by the self-flux method Quality improvement of BaGa4Se7 crystal by annealing in BaSe vapor atmosphere Research on growth mechanism of magnesium hydroxide crystal thin films based on hydrothermal system Editorial Board
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1