Fei-fan Li , Hao-yang Li , Zhao-hua Zhou , Lei Zhou , Wan-ling Deng , Miao Xu , Lei Wang , Wei-jing Wu , Jun-biao Peng
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引用次数: 0
摘要
本文提出了一个基于三端电荷的统一而完整的金属氧化物薄膜晶体管(MO TFT)电容模型。通过有效电荷密度法和 Ward-Dutton 电荷划分法获得了三端电荷的解析表达式。通过考虑任意两个终端之间的非互易电容,提出了准确描述 MO TFT 的完整电容模型。所提出的模型在整个工作区域内具有统一的解析电容表达式,并基于表面电势解决方案具有特定的物理意义。此外,还给出了所制造的 IZO-TFT 的充足电容实验数据,以验证所提出的模型。结果表明,在广泛的工作区域内,实验数据与提出的模型之间存在良好的一致性。
A unified explicit charge-based capacitance model for metal oxide thin-film transistors
A unified and complete capacitance model of metal oxide thin-film transistors (MO TFTs) based on three-terminal charges is proposed in this paper. The analytical expression of the three-terminal charges is obtained with the effective charge density approach and the Ward-Dutton charge partitioning approach. By considering the non-reciprocal capacitance between any two terminals, the complete capacitance model of the MO TFTs is proposed with an accurate description. The proposed model has a uniform and analytical capacitance expression over the full working regions with a specific physical meaning based on the surface potential solution. Furthermore, the sufficient capacitance experimental data of the fabricated IZO-TFT are presented to verify the proposed model. It is shown that there is a good agreement between the experimental data and the proposed model in a wide range of working regions.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.