Compact model for MFIS-NCFETs considering deep-level interface trap states

A direct current (DC) compact model for negative capacitance field-effect transistors (NCFETs) based on a metal-ferroelectric-insulator-semiconductor (MFIS) structure is proposed, considering the influence of deep-level interface trap states. To overcome the bottleneck problem of accurately and efficiently solving models, an explicit algorithm is developed, which is used to solve the complex Landau–Devonshire (LD) formula for the second-order phase transitions in physical models and the transcendental equation of trap density of states and surface potential. Compared with existing algorithms based on analytical surface potential, the new method does not require the numerical methods involving several iterations to obtain more accurate results, and the model can accurately reflect the opposite control effect of interface traps on surface potential and current under different ferroelectric (FE) thicknesses. The high precision of the model was verified through comprehensive numerical calculations and experimental data, indicating that the model can be effectively applied to circuit simulation design under low-power condition.