基于硅碳薄膜的阻抗传感器用于检测低浓度有机蒸汽

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-07-02 DOI:10.1016/j.sse.2024.108978
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引用次数: 0

摘要

在这项研究中,我们报道了在硅碳薄膜中嵌入锰原子和铜原子以制造阻抗有机蒸气传感器的方法。硅碳薄膜包含 4H-SiC、15R-SiC 和 6H-SiC 聚合物以及非晶金刚石相。莫特-肖特基图用于评估硅碳薄膜的导电类型、平带电势和携带密度。在环境温度和高达 80% 的相对湿度下对传感器的运行情况进行了检查,以评估其功能。硅碳薄膜阻抗传感器可检测到 6-37 ppb 的甲苯蒸气。嵌入硅碳薄膜的锰和铜可检测到 5-52 ppb 的异丙醇蒸气,并且在湿度范围(40-65 %)内保持不变。然而,当湿度达到 80 % 时,感应响应范围会减小≈1.5-2 倍,异丙醇对响应的影响很大。
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Impedance sensors based on silicon-carbon films for detection low concentrations of organic vapors

In this research, we reported that manganese and copper atoms were embedded in silicon-carbon films to fabricate impedance organic vapor sensors. Gas sensitive layers were formed using electrochemical deposition of 9:1 CH3OH/HMDS solutions, followed by thermal annealing at 500 °C for 2 h. Silicon-carbon films contain 4H-SiC, 15R-SiC and 6H-SiC polytypes, as well as amorphous diamond phases. Mott-Schottky plots were used to evaluate the silicon-carbon films conductivity type, flat band potential and carrying density. Sensor operations were examined at ambient temperature and up to 80 % relative humidity to assess their functionality. The silicon-carbon films impedance sensors detected 6–37 ppb toluene vapor. The manganese and copper embedded in silicon-carbon films detected 5–52 ppb isopropanol vapor and remained unchanged in humidity range (40–65 %). However, at humidity level up to 80 %, the sensing response range decreases by ≈1.5–2 times, with isopropanol significantly contributing to the response.

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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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