{"title":"基于硅碳薄膜的阻抗传感器用于检测低浓度有机蒸汽","authors":"","doi":"10.1016/j.sse.2024.108978","DOIUrl":null,"url":null,"abstract":"<div><p>In this research, we reported that manganese and copper atoms were embedded in silicon-carbon films to fabricate impedance organic vapor sensors. Gas sensitive layers were formed using electrochemical deposition of 9:1 CH<sub>3</sub>OH/HMDS solutions, followed by thermal annealing at 500 °C for 2 h. Silicon-carbon films contain 4H-SiC, 15R-SiC and 6H-SiC polytypes, as well as amorphous diamond phases. Mott-Schottky plots were used to evaluate the silicon-carbon films conductivity type, flat band potential and carrying density. Sensor operations were examined at ambient temperature and up to 80 % relative humidity to assess their functionality. The silicon-carbon films impedance sensors detected 6–37 ppb toluene vapor. The manganese and copper embedded in silicon-carbon films detected 5–52 ppb isopropanol vapor and remained unchanged in humidity range (40–65 %). However, at humidity level up to 80 %, the sensing response range decreases by ≈1.5–2 times, with isopropanol significantly contributing to the response.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impedance sensors based on silicon-carbon films for detection low concentrations of organic vapors\",\"authors\":\"\",\"doi\":\"10.1016/j.sse.2024.108978\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this research, we reported that manganese and copper atoms were embedded in silicon-carbon films to fabricate impedance organic vapor sensors. Gas sensitive layers were formed using electrochemical deposition of 9:1 CH<sub>3</sub>OH/HMDS solutions, followed by thermal annealing at 500 °C for 2 h. Silicon-carbon films contain 4H-SiC, 15R-SiC and 6H-SiC polytypes, as well as amorphous diamond phases. Mott-Schottky plots were used to evaluate the silicon-carbon films conductivity type, flat band potential and carrying density. Sensor operations were examined at ambient temperature and up to 80 % relative humidity to assess their functionality. The silicon-carbon films impedance sensors detected 6–37 ppb toluene vapor. The manganese and copper embedded in silicon-carbon films detected 5–52 ppb isopropanol vapor and remained unchanged in humidity range (40–65 %). However, at humidity level up to 80 %, the sensing response range decreases by ≈1.5–2 times, with isopropanol significantly contributing to the response.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001278\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001278","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Impedance sensors based on silicon-carbon films for detection low concentrations of organic vapors
In this research, we reported that manganese and copper atoms were embedded in silicon-carbon films to fabricate impedance organic vapor sensors. Gas sensitive layers were formed using electrochemical deposition of 9:1 CH3OH/HMDS solutions, followed by thermal annealing at 500 °C for 2 h. Silicon-carbon films contain 4H-SiC, 15R-SiC and 6H-SiC polytypes, as well as amorphous diamond phases. Mott-Schottky plots were used to evaluate the silicon-carbon films conductivity type, flat band potential and carrying density. Sensor operations were examined at ambient temperature and up to 80 % relative humidity to assess their functionality. The silicon-carbon films impedance sensors detected 6–37 ppb toluene vapor. The manganese and copper embedded in silicon-carbon films detected 5–52 ppb isopropanol vapor and remained unchanged in humidity range (40–65 %). However, at humidity level up to 80 %, the sensing response range decreases by ≈1.5–2 times, with isopropanol significantly contributing to the response.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.