G. Kh. Allayarova, B. E. Umirzakov, A. K. Tashatov
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引用次数: 0
摘要
摘要 利用二次离子质谱、弹性峰电子能谱和奥杰电子能谱等方法，研究了在剂量D=6×1016 cm-2、能量E0=1 keV的\({text\{O}}_{2}^{ + }\ 离子植入硅层后，硅表面的元素和化学成分以及原子在深度上的分布浓度曲线。研究发现，离子掺杂层中形成了硅的氧化物和亚氧化物（SiO2、Si2O 和 SiO0.5），其中还包含未结合的 O 原子和硅原子。植入后在 850-900 K 下退火可形成约 25-30 Å 厚的化学计量 SiO2 层。
Effect of $${\text{O}}_{2}^{ + }$$ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface
Abstract
Using the methods of secondary ion mass spectrometry, elastic peak electron spectroscopy, and Auger electron spectroscopy, the elemental and chemical composition of the surface and concentration profiles of the distribution of atoms over the depth of silicon implanted with \({\text{O}}_{2}^{ + }\) ions with energy E0 = 1 keV at a dose of D = 6 × 1016 cm–2 were studied. It was found that oxides and suboxides of Si (SiO2, Si2O, and SiO0.5) were formed in the ion-doped layer, which also contained unbound O and Si atoms. Post-implantation annealing at 850–900 K led to the formation of a stoichiometric SiO2 layer ~25–30 Å thick.
期刊介绍：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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