电门控和空位对之字形屈曲硅纳米带光学吸收光谱的影响

IF 2.7 Q2 PHYSICS, CONDENSED MATTER Micro and Nanostructures Pub Date : 2024-07-22 DOI:10.1016/j.micrna.2024.207937
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引用次数: 0

摘要

在本研究中,我们结合紧密束缚描述和梯度近似,研究了电门和空位对之字形降伏硅纳米带光学特性的影响。结果表明,在自由缺陷结构中,后栅极电势倾向于将峰值结构移向更高频率,而侧栅极电势则加强了符合选择规则的激发通道强度。特别是,在适当的范围内施加电势,可以提高背栅极在某一频率的光吸收效率,或扩大侧栅极从到的阈值吸收强度。此外,缺陷结构的吸收光谱比完美结构的吸收光谱显示出更丰富的特征,由于费米级附近低能带的局部最小值或最大值之间的跃迁,出现了新的光激发。此外,在有缺陷的结构中应用电门控还能调整吸收光谱,使其具有更多特征。
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Impacts of electric gating and divacancies on optical absorption spectra of zigzag buckling silicene nanoribbons

In this study, by combining the tight-binding description with the gradient approximation, we investigated the impacts of electric gating and divacancies on the optical characteristics of zigzag buckling silicene nanoribbons. Our results show that the back-gate electric potential tends to shift the peak structure to higher frequencies in the free-defective structures, while the side-gate electric potentials intensify the intensity of the excitation channels obeying the selection rule ΔJ=even. In particular, applying the potentials in a suitable range can improve the optical absorption efficiency at a certain frequency with the back gate or widen the threshold absorption intensity from Jv=1 to Jc=1 with the side gates. Besides, the defective structures' absorption spectra exhibit richer features than the perfect one, with the appearance of new optical excitations due to the transitions between the local minimum or maximum in the low-energy bands around the Fermi level. Moreover, applying electric gating in defective structures can also tune the absorption spectra with additional features.

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