Libo Zheng , Yan Jiang , Haowei Xie , Xiaohuan Li , Hualong Ji , Yi Liu , Yufeng Guo
{"title":"采用高线性度 ATRSW 的多开关控制多模式 TRFE,适用于 2.4-GHz ISM 应用","authors":"Libo Zheng , Yan Jiang , Haowei Xie , Xiaohuan Li , Hualong Ji , Yi Liu , Yufeng Guo","doi":"10.1016/j.mejo.2024.106368","DOIUrl":null,"url":null,"abstract":"<div><p>This paper presents a multi-switch-controlled multi-mode transceiver front end (TRFE) designed for the 2.4-GHz industrial–scientific–medical (ISM) band, with a particular focus on enhancing the linearity of the transmit/receive switch (TRSW) on the antenna side. Considering the distinct power levels in the RX/TX paths, the TRSW is designed to be asymmetric. This design not only elevates IP<sub>-0.1dB</sub> by over 50 % compared to the conventional symmetric topology, but also absorbing its function into the input matching network (IMN) of the low noise amplifier (LNA), thereby minimally impacting the noise figure (NF) of the RX chain. For the TX path, the high-pass component of the power amplifier (PA) output matching network (OMN) is repurposed, with a singular inductor being redeployed to serve as an inductive ESD safeguard. Moreover, the driving stage employs a passive gain-boosting technique, which elevates the gain by 3 dB compared to the traditional cascode structure. For verification, this TRFE is fabricated in 0.18-μm CMOS with a die size of 1.53 mm<sup>2</sup>. It achieves a NF of 2.4 dB and a RX gain of 16.7 dB under a 3.3-V supply. A TX gain of 26.2 dB and a saturation output power of 23.3 dBm with a peak power-added efficiency (PAE) of 38.8 % are also demonstrated.</p></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multi-switch-controlled multi-mode TRFE with a high-linearity ATRSW for 2.4-GHz ISM applications\",\"authors\":\"Libo Zheng , Yan Jiang , Haowei Xie , Xiaohuan Li , Hualong Ji , Yi Liu , Yufeng Guo\",\"doi\":\"10.1016/j.mejo.2024.106368\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This paper presents a multi-switch-controlled multi-mode transceiver front end (TRFE) designed for the 2.4-GHz industrial–scientific–medical (ISM) band, with a particular focus on enhancing the linearity of the transmit/receive switch (TRSW) on the antenna side. Considering the distinct power levels in the RX/TX paths, the TRSW is designed to be asymmetric. This design not only elevates IP<sub>-0.1dB</sub> by over 50 % compared to the conventional symmetric topology, but also absorbing its function into the input matching network (IMN) of the low noise amplifier (LNA), thereby minimally impacting the noise figure (NF) of the RX chain. For the TX path, the high-pass component of the power amplifier (PA) output matching network (OMN) is repurposed, with a singular inductor being redeployed to serve as an inductive ESD safeguard. Moreover, the driving stage employs a passive gain-boosting technique, which elevates the gain by 3 dB compared to the traditional cascode structure. For verification, this TRFE is fabricated in 0.18-μm CMOS with a die size of 1.53 mm<sup>2</sup>. It achieves a NF of 2.4 dB and a RX gain of 16.7 dB under a 3.3-V supply. A TX gain of 26.2 dB and a saturation output power of 23.3 dBm with a peak power-added efficiency (PAE) of 38.8 % are also demonstrated.</p></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-08-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1879239124000729\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124000729","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Multi-switch-controlled multi-mode TRFE with a high-linearity ATRSW for 2.4-GHz ISM applications
This paper presents a multi-switch-controlled multi-mode transceiver front end (TRFE) designed for the 2.4-GHz industrial–scientific–medical (ISM) band, with a particular focus on enhancing the linearity of the transmit/receive switch (TRSW) on the antenna side. Considering the distinct power levels in the RX/TX paths, the TRSW is designed to be asymmetric. This design not only elevates IP-0.1dB by over 50 % compared to the conventional symmetric topology, but also absorbing its function into the input matching network (IMN) of the low noise amplifier (LNA), thereby minimally impacting the noise figure (NF) of the RX chain. For the TX path, the high-pass component of the power amplifier (PA) output matching network (OMN) is repurposed, with a singular inductor being redeployed to serve as an inductive ESD safeguard. Moreover, the driving stage employs a passive gain-boosting technique, which elevates the gain by 3 dB compared to the traditional cascode structure. For verification, this TRFE is fabricated in 0.18-μm CMOS with a die size of 1.53 mm2. It achieves a NF of 2.4 dB and a RX gain of 16.7 dB under a 3.3-V supply. A TX gain of 26.2 dB and a saturation output power of 23.3 dBm with a peak power-added efficiency (PAE) of 38.8 % are also demonstrated.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.