基于 FVF 结构的 -184 dB PSRR 和 2.47 μVrms 噪声自偏压带隙基准

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-08-23 DOI:10.1016/j.mejo.2024.106388

Jin Xie , Chunkai Wu , Junyuan Wu , Jinghu Li , Zhicong Luo , Qiyan Sun

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引用次数: 0

摘要

本文介绍了一种高电源抑制比 (PSRR)、低噪声和低功耗的自偏压带隙电压基准 (BGR)。针对功耗和输出噪声之间的权衡，提出了一种反馈深度增强技术，以减轻电阻器对输出噪声和偏移电压的影响。基于改进型翻转电压跟随器（FVF）的新型自调节技术提高了 PSRR。设计的 BGR 在各种工艺角、电压和温度 (PVT) 条件下进行了后仿真验证。它采用 0.18μm BiCMOS 工艺，有效面积为 0.016 mm2。BGR 的正常工作电压为 3.0 V - 3.6 V，静态电流为 3.6 μA。最佳未修整 TC 为 22.04 ppm/∘C，0.1 Hz 至 10 Hz 的均方根噪声仅为 2.47 μVrms。当 VIN = 3.0 V 时，PSRR 为 -184 dB@1 Hz 和 -50 dB@1 MHz。

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A −184 dB PSRR and 2.47 μVrms noise self biased bandgap reference based on FVF structure

A high power supply rejection ratio (PSRR), low noise and low-power self-biased bandgap voltage reference (BGR) is presented in this paper. In response to the trade-off between power consumption and output noise, a feedback depth enhancement technique is proposed for mitigating the effect of the resistor on output noise and offset voltage. The PSRR is enhanced by a novel self regulating technology based on an improved flipped voltage follower (FVF). The designed BGR was verified under post-simulation for various process corners, voltages and temperatures (PVT). It was using $0.18 μ m$ BiCMOS process, occupying an active area of 0.016 mm $^{2}$ . The BGR operates normally at 3.0 V – 3.6 V with a quiescent current of 3.6 $μ$ A. The best untrimmed TC is 22.04 ppm $/^{\circ} C$ and the rms noise is only 2.47 $μ V_{r m s}$ from 0.1 Hz to 10 Hz. The PSRR is −184 dB@1 Hz and −50 dB@1 MHz when $V_{I N}$ = 3.0 V.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.

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