Xiaomin He , Haitao Zhang , Liqiao Wu , Jichao Hu , Min Lu , Lei Yuan
{"title":"AlN/ β-Ga2O3 HEMT 温度特性仿真研究","authors":"Xiaomin He , Haitao Zhang , Liqiao Wu , Jichao Hu , Min Lu , Lei Yuan","doi":"10.1016/j.mejo.2024.106386","DOIUrl":null,"url":null,"abstract":"<div><p>This paper reports a comprehensive analysis of temperature on DC and AC characteristics of AlN/β-Ga<sub>2</sub>O<sub>3</sub> HEMT. As the temperature increases from 300 °C to 500 °C, the drain current (<em>I</em><sub><em>DS</em></sub>) decreases by 50 %, leading to a 50 % decrease in transconductance (<em>g</em><sub><em>m</em></sub>) without self heating effect. This decrease in maximum <em>g</em><sub><em>m</em></sub> further resulted in a significant reduction of 49 % in the cut-off frequency (<em>f</em><sub><em>T</em></sub>). Incorporating the self-heating effect, while the threshold voltage (<em>V</em><sub><em>th</em></sub>) remains unaffected, the maximum <em>g</em><sub><em>m</em></sub> experiences a marked decrease. At 300 °C, the decrease reaches 58 %, while at 500 °C, the decrease is 36 %. Additionally, the saturation <em>I</em><sub><em>DS</em></sub> shows a negative differential resistance phenomenon. Furthermore, the decrease at 300°Cin <em>f</em><sub><em>T</em></sub> reaches 45 %, while at 500 °C, the decrease is 30 %. The main reason for the performance degradation caused by self heating effect at low temperatures is that the peak temperature at the channel of the device increases more significantly at low temperatures, resulting in a more significant decrease in mobility.</p></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation study on temperature characteristics of AlN/ β-Ga2O3 HEMT\",\"authors\":\"Xiaomin He , Haitao Zhang , Liqiao Wu , Jichao Hu , Min Lu , Lei Yuan\",\"doi\":\"10.1016/j.mejo.2024.106386\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This paper reports a comprehensive analysis of temperature on DC and AC characteristics of AlN/β-Ga<sub>2</sub>O<sub>3</sub> HEMT. As the temperature increases from 300 °C to 500 °C, the drain current (<em>I</em><sub><em>DS</em></sub>) decreases by 50 %, leading to a 50 % decrease in transconductance (<em>g</em><sub><em>m</em></sub>) without self heating effect. This decrease in maximum <em>g</em><sub><em>m</em></sub> further resulted in a significant reduction of 49 % in the cut-off frequency (<em>f</em><sub><em>T</em></sub>). Incorporating the self-heating effect, while the threshold voltage (<em>V</em><sub><em>th</em></sub>) remains unaffected, the maximum <em>g</em><sub><em>m</em></sub> experiences a marked decrease. At 300 °C, the decrease reaches 58 %, while at 500 °C, the decrease is 36 %. Additionally, the saturation <em>I</em><sub><em>DS</em></sub> shows a negative differential resistance phenomenon. Furthermore, the decrease at 300°Cin <em>f</em><sub><em>T</em></sub> reaches 45 %, while at 500 °C, the decrease is 30 %. The main reason for the performance degradation caused by self heating effect at low temperatures is that the peak temperature at the channel of the device increases more significantly at low temperatures, resulting in a more significant decrease in mobility.</p></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-08-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1879239124000900\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124000900","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Simulation study on temperature characteristics of AlN/ β-Ga2O3 HEMT
This paper reports a comprehensive analysis of temperature on DC and AC characteristics of AlN/β-Ga2O3 HEMT. As the temperature increases from 300 °C to 500 °C, the drain current (IDS) decreases by 50 %, leading to a 50 % decrease in transconductance (gm) without self heating effect. This decrease in maximum gm further resulted in a significant reduction of 49 % in the cut-off frequency (fT). Incorporating the self-heating effect, while the threshold voltage (Vth) remains unaffected, the maximum gm experiences a marked decrease. At 300 °C, the decrease reaches 58 %, while at 500 °C, the decrease is 36 %. Additionally, the saturation IDS shows a negative differential resistance phenomenon. Furthermore, the decrease at 300°Cin fT reaches 45 %, while at 500 °C, the decrease is 30 %. The main reason for the performance degradation caused by self heating effect at low temperatures is that the peak temperature at the channel of the device increases more significantly at low temperatures, resulting in a more significant decrease in mobility.
期刊介绍：
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
