Design of a 4H–SiC Schottky barrier FET biosensor with dual-source and dual-drain on suspended beam channel

In this paper, a Schottky barrier field effect transistor biosensor with dual-source, dual-drain, and a suspended beam channel (DSDD-SB-FET) is proposed and its biosensor performance is investigated by simulation. The simulation results show that compared with the conventional 6H–SiC Schottky barrier field effect transistor (6H-SiC-SB-FET) biosensor, the new structure proposed in this paper has superior sensitivity characteristics. The S_Ion is 1.83 × 10⁸, S_gm,max is 1.44 × 10⁸, S_Ion/Ioff is 1.53 × 10⁷, and S_SS is 83 % at K = 12, which are respectively 554 times, 476 times, 2.76 × 10⁴ times, and 61 % higher than those of the 6H-SiC-SB-FET. In addition, we also investigate the effects of non-ideal filling conditions and temperature variations on its performance in practical applications, and conclude that the DSDD-SB-FET biosensor has excellent sensing performance in practical applications as well.