调整掺杂过渡金属的氧化锌纳米粒子的结构、光学和磁学特性

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-08-30 DOI:10.1007/s10854-024-13433-3
Shradha Roy, Samrat Mukherjee
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引用次数: 0

摘要

通过表面活性剂辅助共沉淀路线制备了掺杂过渡金属 Ni2+ 的氧化锌纳米粒子,通式为 Zn1-xNixO(x = 0.00、0.04、0.08 和 0.12)。研究采用了多种表征技术,如 X 射线衍射(XRD)、用于结构表征的高分辨率透射电子显微镜(HRTEM)、紫外可见光谱(UV-Vis)、用于光学表征的光致发光光谱(PL)和用于磁性表征的振动样品磁力计(VSM),探讨了过渡金属掺杂对氧化锌纳米粒子的结构、光学和磁学特性的影响。所有样品都具有单相六边形结构,平均结晶尺寸在 22 至 26 纳米之间。HRTEM 用于研究颗粒的尺寸分布和形态。最初发现,当掺杂镍的水平从 0% 提高到 8% 时,光能带隙从 3.27 eV 蓝移到 3.36 eV,当掺杂镍的水平从 8% 提高到 12% 时,光能带隙进一步从 3.36 eV 红移到 3.29 eV。聚光研究显示,在 425 纳米波长处有一个宽的紫色发射带,表明 ZnO 晶格中存在锌间隙和氧间隙缺陷。室温磁化(M-H)回路表明,掺杂镍后,氧化锌的二磁性会转变为弱铁磁性。掺杂 8% Ni2+ 的氧化锌样品的饱和磁化率为 0.18 emu/g。由于实现室温铁磁性对稀磁半导体至关重要,我们的研究为自旋电子学和高频应用做出了宝贵贡献。
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Tuning the structural, optical and magnetic properties of transition metal doped zinc oxide nanoparticles

Transition metal Ni2+ doped ZnO nanoparticles were prepared by surfactant-aided co-precipitation route with the general formula Zn1-xNixO (x = 0.00, 0.04, 0.08, and 0.12). The influence of transition metal doping on the structural, optical, and magnetic characteristics of ZnO nanoparticles has been explored employing a variety of characterization techniques, such as x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) for structural characterization, ultra violet visible spectroscopy (UV–Vis), photoluminescence spectroscopy (PL) for optical characterization, and vibrating sample magnetometer (VSM) for magnetic characterization. All the samples had a single-phase hexagonal structure with a mean crystallite size ranging from 22 to 26 nm. HRTEM was used to study the size distribution and morphology of the particles. The optical energy band gap was initially found to blue shift from 3.27 to 3.36 eV when Ni dopant level increased from 0 to 8%, and further red shifted from 3.36 to 3.29 eV when the Ni dopant level increased from 8 to 12%. The PL study shows a broad violet emission band at 425 nm, indicating the presence of zinc interstitials and oxygen interstitial defects in the ZnO lattice. Room temperature magnetization (M–H) loops suggested that the diamagnetic behaviour of ZnO changes to weak ferromagnetism when doped with Ni. A saturation magnetization of 0.18 emu/g was seen for the ZnO sample doped with 8% Ni2+. Since achieving room temperature ferromagnetism is crucial for dilute magnetic semiconductors, our study presents a valuable contribution for spintronics and high-frequency applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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