Qin Gao, Nianshun Zhao, Jiale Wu, Qi Yu, Li Wang, Juan Hu, Sha Lu, Xiaofan Zheng
{"title":"(1-x)[0.90NaNbO3-0.10Bi(Mg0.5Ta0.5)O3]-x(Bi0.5Na0.5)0.7(Sr0.7La0.2)0.3Ti0.9Zr0.1O3 陶瓷的介电性能和阻抗谱研究","authors":"Qin Gao, Nianshun Zhao, Jiale Wu, Qi Yu, Li Wang, Juan Hu, Sha Lu, Xiaofan Zheng","doi":"10.1007/s10854-024-13474-8","DOIUrl":null,"url":null,"abstract":"<p>The solid-state reaction method was employed to synthesize (1−<i>x</i>)[0.90NaNbO<sub>3</sub>–0.10Bi(Mg<sub>0.5</sub>Ta<sub>0.5</sub>)O<sub>3</sub>]–<i>x</i>(Bi<sub>0.5</sub>Na<sub>0.5</sub>)<sub>0.7</sub>(Sr<sub>0.7</sub>La<sub>0.2</sub>)<sub>0.3</sub>Ti<sub>0.9</sub>Zr<sub>0.1</sub>O<sub>3</sub>, denoted as (1−<i>x</i>)(NN–BMT)–<i>x</i>BNSLTZ (<i>x</i>BNSLTZ). XRD analysis of <i>x</i>BNSLTZ confirmed that all samples possessed a pure perovskite structure. SEM micrographs demonstrated homogeneous grain distribution and minimal porosity. With an increasing concentration of BNSLTZ, there was a gradual reduction in average grain size. Impedance spectroscopy was utilized to investigate the electrical properties of <i>x</i>BNSLTZ across a frequency sweep of 10 Hz–1 MHz and over a temperature range of 420–560 °C. The complex impedance and modulus spectra reveal non-Debye-type dielectric relaxation, indicative of two contributing mechanisms: grain and grain boundary effects on conduction. Electric modulus analysis indicated that the low-frequency relaxation process was temperature independent. The dc conductivity variation with temperature follows the Arrhenius equation. The ac conductivity was found to adhere to Jonscher power law. The <i>E</i><sub><i>a</i></sub> (the relaxation activation energy) and <i>E</i><sub><i>c</i></sub> (conductance activation energy) confirmed the relaxation mechanism of 0.3BNSLTZ is dipolar conduction. The dielectric properties showed a significant dependence on both frequency and temperature. A dielectric anomaly pointed to the presence of a single relaxation behavior. It was observed that an increase in BNSLTZ concentration led to a decrease in the maximum dielectric constant. Optimum performance was obtained with the 0.3BNSLTZ ceramics, which has the smallest average grain size (1.54 μm), considerable resistance value (<i>R</i> ~ 1000 K <span>\\({\\Omega }cm\\)</span>), and moderate dielectric constant (<i>ε</i><sub>r</sub> ~ 600), superior to the pure NN-BMT ceramic. These results demonstrate that the electrical property of the <i>x</i>BNSLTZ ceramics have some potential value in the application of electrical materials.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dielectric properties and impedance spectroscopic study of (1−x)[0.90NaNbO3–0.10Bi(Mg0.5Ta0.5)O3]–x(Bi0.5Na0.5)0.7(Sr0.7La0.2)0.3Ti0.9Zr0.1O3 ceramics\",\"authors\":\"Qin Gao, Nianshun Zhao, Jiale Wu, Qi Yu, Li Wang, Juan Hu, Sha Lu, Xiaofan Zheng\",\"doi\":\"10.1007/s10854-024-13474-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The solid-state reaction method was employed to synthesize (1−<i>x</i>)[0.90NaNbO<sub>3</sub>–0.10Bi(Mg<sub>0.5</sub>Ta<sub>0.5</sub>)O<sub>3</sub>]–<i>x</i>(Bi<sub>0.5</sub>Na<sub>0.5</sub>)<sub>0.7</sub>(Sr<sub>0.7</sub>La<sub>0.2</sub>)<sub>0.3</sub>Ti<sub>0.9</sub>Zr<sub>0.1</sub>O<sub>3</sub>, denoted as (1−<i>x</i>)(NN–BMT)–<i>x</i>BNSLTZ (<i>x</i>BNSLTZ). XRD analysis of <i>x</i>BNSLTZ confirmed that all samples possessed a pure perovskite structure. SEM micrographs demonstrated homogeneous grain distribution and minimal porosity. With an increasing concentration of BNSLTZ, there was a gradual reduction in average grain size. Impedance spectroscopy was utilized to investigate the electrical properties of <i>x</i>BNSLTZ across a frequency sweep of 10 Hz–1 MHz and over a temperature range of 420–560 °C. The complex impedance and modulus spectra reveal non-Debye-type dielectric relaxation, indicative of two contributing mechanisms: grain and grain boundary effects on conduction. Electric modulus analysis indicated that the low-frequency relaxation process was temperature independent. The dc conductivity variation with temperature follows the Arrhenius equation. The ac conductivity was found to adhere to Jonscher power law. The <i>E</i><sub><i>a</i></sub> (the relaxation activation energy) and <i>E</i><sub><i>c</i></sub> (conductance activation energy) confirmed the relaxation mechanism of 0.3BNSLTZ is dipolar conduction. The dielectric properties showed a significant dependence on both frequency and temperature. A dielectric anomaly pointed to the presence of a single relaxation behavior. It was observed that an increase in BNSLTZ concentration led to a decrease in the maximum dielectric constant. Optimum performance was obtained with the 0.3BNSLTZ ceramics, which has the smallest average grain size (1.54 μm), considerable resistance value (<i>R</i> ~ 1000 K <span>\\\\({\\\\Omega }cm\\\\)</span>), and moderate dielectric constant (<i>ε</i><sub>r</sub> ~ 600), superior to the pure NN-BMT ceramic. These results demonstrate that the electrical property of the <i>x</i>BNSLTZ ceramics have some potential value in the application of electrical materials.</p>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s10854-024-13474-8\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s10854-024-13474-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Dielectric properties and impedance spectroscopic study of (1−x)[0.90NaNbO3–0.10Bi(Mg0.5Ta0.5)O3]–x(Bi0.5Na0.5)0.7(Sr0.7La0.2)0.3Ti0.9Zr0.1O3 ceramics
The solid-state reaction method was employed to synthesize (1−x)[0.90NaNbO3–0.10Bi(Mg0.5Ta0.5)O3]–x(Bi0.5Na0.5)0.7(Sr0.7La0.2)0.3Ti0.9Zr0.1O3, denoted as (1−x)(NN–BMT)–xBNSLTZ (xBNSLTZ). XRD analysis of xBNSLTZ confirmed that all samples possessed a pure perovskite structure. SEM micrographs demonstrated homogeneous grain distribution and minimal porosity. With an increasing concentration of BNSLTZ, there was a gradual reduction in average grain size. Impedance spectroscopy was utilized to investigate the electrical properties of xBNSLTZ across a frequency sweep of 10 Hz–1 MHz and over a temperature range of 420–560 °C. The complex impedance and modulus spectra reveal non-Debye-type dielectric relaxation, indicative of two contributing mechanisms: grain and grain boundary effects on conduction. Electric modulus analysis indicated that the low-frequency relaxation process was temperature independent. The dc conductivity variation with temperature follows the Arrhenius equation. The ac conductivity was found to adhere to Jonscher power law. The Ea (the relaxation activation energy) and Ec (conductance activation energy) confirmed the relaxation mechanism of 0.3BNSLTZ is dipolar conduction. The dielectric properties showed a significant dependence on both frequency and temperature. A dielectric anomaly pointed to the presence of a single relaxation behavior. It was observed that an increase in BNSLTZ concentration led to a decrease in the maximum dielectric constant. Optimum performance was obtained with the 0.3BNSLTZ ceramics, which has the smallest average grain size (1.54 μm), considerable resistance value (R ~ 1000 K \({\Omega }cm\)), and moderate dielectric constant (εr ~ 600), superior to the pure NN-BMT ceramic. These results demonstrate that the electrical property of the xBNSLTZ ceramics have some potential value in the application of electrical materials.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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