薄膜的结构、形态、光学和电学特性研究:有效介质理论在氧化镉/氧化钴复合材料中的应用

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-08-31 DOI:10.1007/s10854-024-13392-9
A. Neffah, H. Tabet-Derraz, M. A. Benali, K. M. E. Boureguig, M. Z. Belmehdi, H. Saci
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引用次数: 0

摘要

利用喷雾热解法在 360 ℃ 下将氧化镉(CdO)、氧化钴(Co3O4)及其复合材料薄膜沉积在玻璃基板上。薄膜通过各种技术进行了表征,包括能量色散 X 射线光谱(EDX)、扫描电子显微镜(SEM)、X 射线衍射(XRD)和紫外可见光谱(UV-Vis)。此外,还进行了霍尔效应测量,以评估其结构、光学和电学特性。XRD 分析表明,CdO 和 Co3O4 均具有立方对称的晶体结构,舍勒方程证实了它们的纳米材料性质。EDX 结果表明,薄膜中氧、镉和钴的比例各不相同。另一方面,通过陶克图测定的光带隙显示,Co3O4 的 Eg1 = 1.54 eV 和 Eg2 = 2.01 eV,CdO 的 Eg3 = 2.4 eV。至于霍尔效应测量,则是为了确定一些电气参数。结果表明,在 CdO 中加入 Co3O4 增加了复合材料的片电阻。这项研究有望应用于多个领域,包括设计太阳能电池(光伏设备)和制造新型光基设备(光电设备)。此外,还评估了不同成分(x = 0.7、0.5 和 0.3)的 (CdO)x (Co3O4)1-x 复合材料的介电功能。实验测量了 350 至 2500 纳米的介电性能,并使用 Looyenga、Kim 和 Bruggman 等混合方程进行了理论计算,其中 Looyenga 模型准确地描述了所研究材料的介电性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Investigation of the structural, morphological, optical, and electrical properties of thin films: application of effective medium theories to CdO/Co3O4 composites

Thin films of cadmium oxide (CdO), cobalt oxide (Co3O4), and their composites were deposited on glass substrates at 360 ℃ using the spray pyrolysis method. The films underwent characterization through various techniques, including energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD), and ultraviolet–visible spectroscopy (UV–Vis). Hall Effect measurements were also conducted to assess the structural, optical, and electrical properties. The XRD analysis revealed crystalline structures with cubic symmetry for both CdO and Co3O4, and the Scherrer equation confirmed their nanomaterial nature. EDX results identified the distinct proportions of oxygen, cadmium, and cobalt in the films. On the other hand, the optical band gaps determined via Tauc plots indicated values of Eg1 = 1.54 eV and Eg2 = 2.01 eV for Co3O4, and Eg3 = 2.4 eV for CdO. As for the Hall Effect measurements, they were performed to determine a number of electrical parameters. The results showed that the addition of Co3O4 into CdO increased the sheet resistance of the composite. This research has potential applications in various areas, including the design of solar cells (photovoltaic devices) and the creation of new light-based devices (optoelectronic devices). Additionally, the dielectric functions of composites (CdO)x (Co3O4)1-x with varying compositions (x = 0.7, 0.5, and 0.3) were evaluated. The dielectric properties were experimentally measured from 350 to 2500 nm, and theoretical calculations were performed using mixing equations like Looyenga, Kim, and Bruggman, with the Looyenga model accurately depicting the dielectric properties of the materials studied.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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