基于晶闸管的共模不敏感锁存再生比较器,适用于低电源电压应用

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-09-16 DOI:10.1016/j.mejo.2024.106419
Hadi Pahlavanzadeh , Reza Navabi , Saba Iesakhani
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引用次数: 0

摘要

本文介绍的是一种新型两级轨至轨再生比较器电路,专为低电源电压应用而设计。这项工作首次引入了基于晶闸管的锁存器,使比较器能够从轨至轨输入运行。采用标准 65 纳米 CMOS 技术对所提出的比较器进行了布局后仿真。最坏情况下的仿真结果表明,在 0.6V 电源电压和 1 MHz 采样率的全共模范围内,比较器的延迟小于 22ns,功耗仅为 132 nW。此外,在整个轨至轨共模电压范围内,总输入参考偏移电压(3std + 平均值)始终低于 21 mV。与传统的单级比较器相比,所提出的电路在延迟和能效方面提高了 87% 以上。鉴于其出色的性能指标,该比较器非常适合用于生物医学植入物、逐次逼近寄存器模数转换器(SAR ADC)、物联网(IoT)等低电源电压应用。
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A common-mode insensitive thyristor-based latch regenerative comparator for low supply voltage applications

Presented in this article is a new two-stage rail-to-rail regenerative comparator circuit designed for low supply voltage applications. This work introduces a thyristor-based latch for the first time, allowing the comparator to operate from rail-to-rail inputs. The proposed comparator has been post-layout simulated using a standard 65 nm CMOS technology. The worst-case simulation results demonstrate that the comparator exhibits a delay of less than 22ns and consumes only 132 nW of power at a supply voltage of 0.6V and a sample rate of 1 MHz across its full common-mode range. Furthermore, the total input-referred offset voltage (3std + mean) remains below 21 mV throughout the entire rail-to-rail common-mode voltage range. Compared to the conventional single-stage comparator, the proposed circuit showcases an improvement of over 87 % in terms of delay and energy efficiency. Given its dignified performance metrics, this comparator is well-suited for use in low supply voltage applications such as biomedical implants, successive approximation registers analog-to-digital converters (SAR ADCs), Internet of Things (IoT).

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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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