{"title":"Smart-CX - 集成电路寄生电容提取方法","authors":"","doi":"10.1016/j.sse.2024.109007","DOIUrl":null,"url":null,"abstract":"<div><div>This paper proposes a novel rule-based parasitic capacitance extraction methodology, integrated into Smart-CX, to enhance the accuracy of SPICE simulations and physical verification of ICs. This methodology is crucial during the microchip design phase, particularly in preparation for fabrication on mature to advanced process nodes. The proposed enhanced analytical method addresses the accuracy/time tradeoffs between numerical and analytical extraction techniques. This study validates the accuracy of the methodology by comparison of the extracted parasitic parameters with foundry-provided 2D-models. The parasitic capacitances that are extracted within this method include: area capacitances <span><math><mrow><mo>(</mo><mi>C</mi><mi>a</mi><mo>)</mo></mrow></math></span>, coupling capacitances (<span><math><mrow><mi>C</mi><mi>c</mi><mo>)</mo></mrow></math></span>, including via-to-via capacitances <span><math><mrow><mo>(</mo><mi>C</mi><mi>m</mi><mi>v</mi><mo>)</mo></mrow></math></span>, contact-to-gate capacitances <span><math><mrow><mo>(</mo><mi>C</mi><mi>m</mi><mi>g</mi><mo>)</mo></mrow></math></span>, contact-to-active capacitances <strong>(</strong><span><math><mrow><mi>C</mi><mi>m</mi><mi>c</mi><mo>)</mo></mrow></math></span> and fringe type capacitances with the top <span><math><mrow><mo>(</mo><mi>C</mi><mi>f</mi><mi>t</mi><mo>)</mo></mrow></math></span> and bottom <span><math><mrow><mo>(</mo><mi>C</mi><mi>f</mi><mi>b</mi><mo>)</mo></mrow></math></span> conductive layers.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Smart-CX – Method of extraction of parasitic capacitances in ICs\",\"authors\":\"\",\"doi\":\"10.1016/j.sse.2024.109007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This paper proposes a novel rule-based parasitic capacitance extraction methodology, integrated into Smart-CX, to enhance the accuracy of SPICE simulations and physical verification of ICs. This methodology is crucial during the microchip design phase, particularly in preparation for fabrication on mature to advanced process nodes. The proposed enhanced analytical method addresses the accuracy/time tradeoffs between numerical and analytical extraction techniques. This study validates the accuracy of the methodology by comparison of the extracted parasitic parameters with foundry-provided 2D-models. The parasitic capacitances that are extracted within this method include: area capacitances <span><math><mrow><mo>(</mo><mi>C</mi><mi>a</mi><mo>)</mo></mrow></math></span>, coupling capacitances (<span><math><mrow><mi>C</mi><mi>c</mi><mo>)</mo></mrow></math></span>, including via-to-via capacitances <span><math><mrow><mo>(</mo><mi>C</mi><mi>m</mi><mi>v</mi><mo>)</mo></mrow></math></span>, contact-to-gate capacitances <span><math><mrow><mo>(</mo><mi>C</mi><mi>m</mi><mi>g</mi><mo>)</mo></mrow></math></span>, contact-to-active capacitances <strong>(</strong><span><math><mrow><mi>C</mi><mi>m</mi><mi>c</mi><mo>)</mo></mrow></math></span> and fringe type capacitances with the top <span><math><mrow><mo>(</mo><mi>C</mi><mi>f</mi><mi>t</mi><mo>)</mo></mrow></math></span> and bottom <span><math><mrow><mo>(</mo><mi>C</mi><mi>f</mi><mi>b</mi><mo>)</mo></mrow></math></span> conductive layers.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001564\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001564","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Smart-CX – Method of extraction of parasitic capacitances in ICs
This paper proposes a novel rule-based parasitic capacitance extraction methodology, integrated into Smart-CX, to enhance the accuracy of SPICE simulations and physical verification of ICs. This methodology is crucial during the microchip design phase, particularly in preparation for fabrication on mature to advanced process nodes. The proposed enhanced analytical method addresses the accuracy/time tradeoffs between numerical and analytical extraction techniques. This study validates the accuracy of the methodology by comparison of the extracted parasitic parameters with foundry-provided 2D-models. The parasitic capacitances that are extracted within this method include: area capacitances , coupling capacitances (, including via-to-via capacitances , contact-to-gate capacitances , contact-to-active capacitances ( and fringe type capacitances with the top and bottom conductive layers.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.