具有共模变化抑制开关方案和增益提升动态比较器的 Cryo-CMOS 10 位 60-MS/s SAR ADC

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-10-09 DOI:10.1016/j.mejo.2024.106435
Chia-Wei Pai , Ken Uchida , Munehiro Tada , Hiroki Ishikuro
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引用次数: 0

摘要

本文介绍了一种采用高能效共模变化抑制(CMVS)开关方案的 10 位 60-MS/s SAR ADC。与传统方案相比,所提出的 CMVS 开关方案可将能耗降低约 92%。此外,它还将共模变化缩小至 16.6 % VDD。它提高了 SAR ADC 的精度,并使比较器和 SAR ADC 工作在最佳性能区域。建议的比较器采用增益增强型动态电容前置放大器,以提高放大率并加快比较速度。再生锁存器保持了交叉耦合反相器结构,以确保高速再生。锁存器的输入对可抑制直通电流,同时降低再生速度。因此,需要增加一个辅助输入对来提高再生速度。SAR ADC 采用 65 纳米 Cryo-CMOS 技术设计和仿真,VDD = 1.2 V。在温度为 300 K 时,它的 FoM 为 15.39 fJ/转换步,速度为 55-MS/s。在温度为 4 K 时,它实现了 14.15 fJ/转换步、60-MS/s 的 FoM。
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A Cryo-CMOS 10-bit 60-MS/s SAR ADC with common-mode variation suppression switching scheme and gain boosting dynamic comparator
This paper presents a 10-bit 60-MS/s SAR ADC using an energy-efficient common-mode variation suppression (CMVS) switching scheme. The proposed CMVS switching scheme reduces energy consumption by about 92 % compared to the conventional scheme. Also, it narrows the common-mode variation to 16.6 % VDD. It improves the accuracy of the SAR ADC and makes the comparator and SAR ADC operate at the best-performance region. The proposed comparator adopts a gain boosting dynamic capacitive pre-amplifier to enhance the amplification and accelerate the comparison speed. The regeneration latch keeps the cross-coupled inverter structure to ensure high-speed regeneration. The input pair of the latch suppresses the through current while decreasing the regeneration speed. Therefore, an auxiliary input pair is added to enhance the regeneration speed. The SAR ADC is designed and simulated using 65-nm Cryo-CMOS technology with VDD = 1.2 V. At T = 300 K, it achieves a FoM of 15.39 fJ/conversion-step with 55-MS/s. At T = 4 K, it achieves a FoM of 14.15 fJ/conversion-step with 60-MS/s.
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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