{"title":"栅极功函数变化对存在栅极静电耦合的多栅极鳍状硅量子点器件特性的影响","authors":"Kimihiko Kato, Hidehiro Asai, Hiroshi Oka, Shota Iizuka, Hiroshi Fuketa, Takumi Inaba, Takahiro Mori","doi":"10.1016/j.sse.2024.109013","DOIUrl":null,"url":null,"abstract":"<div><div>We explored the effects of gate work function variation (WFV) through device simulation on a fin-shaped silicon quantum dot device with a multi-gate configuration for a large-scale integrated array. The threshold voltage (<em>V</em><sub>th</sub>) of current–voltage characteristics is affected by WFV in both main and surrounding gates, indicating the existence of electrostatic coupling among these gates. The electrostatic coupling can be reduced by biasing on the surrounding gates. Furthermore, the concept of <em>V</em><sub>th</sub>, following conventional transistors, works as a reference of voltage and potential in the present multi-gate device. This knowledge contributes to establishing a practical method for the statistical analysis of qubit variability.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"223 ","pages":"Article 109013"},"PeriodicalIF":1.4000,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of gate work function variations on characteristics of fin-shaped silicon quantum dot device with multi-gate under existence of gate electrostatic coupling\",\"authors\":\"Kimihiko Kato, Hidehiro Asai, Hiroshi Oka, Shota Iizuka, Hiroshi Fuketa, Takumi Inaba, Takahiro Mori\",\"doi\":\"10.1016/j.sse.2024.109013\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>We explored the effects of gate work function variation (WFV) through device simulation on a fin-shaped silicon quantum dot device with a multi-gate configuration for a large-scale integrated array. The threshold voltage (<em>V</em><sub>th</sub>) of current–voltage characteristics is affected by WFV in both main and surrounding gates, indicating the existence of electrostatic coupling among these gates. The electrostatic coupling can be reduced by biasing on the surrounding gates. Furthermore, the concept of <em>V</em><sub>th</sub>, following conventional transistors, works as a reference of voltage and potential in the present multi-gate device. This knowledge contributes to establishing a practical method for the statistical analysis of qubit variability.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"223 \",\"pages\":\"Article 109013\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S003811012400162X\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S003811012400162X","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Influence of gate work function variations on characteristics of fin-shaped silicon quantum dot device with multi-gate under existence of gate electrostatic coupling
We explored the effects of gate work function variation (WFV) through device simulation on a fin-shaped silicon quantum dot device with a multi-gate configuration for a large-scale integrated array. The threshold voltage (Vth) of current–voltage characteristics is affected by WFV in both main and surrounding gates, indicating the existence of electrostatic coupling among these gates. The electrostatic coupling can be reduced by biasing on the surrounding gates. Furthermore, the concept of Vth, following conventional transistors, works as a reference of voltage and potential in the present multi-gate device. This knowledge contributes to establishing a practical method for the statistical analysis of qubit variability.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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