栅极功函数变化对存在栅极静电耦合的多栅极鳍状硅量子点器件特性的影响

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-10-22 DOI:10.1016/j.sse.2024.109013

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引用次数: 0

摘要

我们通过对大规模集成阵列多栅极配置的鳍状硅量子点器件进行器件仿真，探索了栅极功函数变化（WFV）的影响。电流-电压特性的阈值电压（Vth）受主栅极和周围栅极的 WFV 影响，表明这些栅极之间存在静电耦合。通过对周围栅极进行偏压，可以降低静电耦合。此外，Vth 的概念沿袭了传统晶体管，在目前的多栅极器件中可作为电压和电势的参考。这些知识有助于为量子位变异性统计分析建立一种实用方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of gate work function variations on characteristics of fin-shaped silicon quantum dot device with multi-gate under existence of gate electrostatic coupling

We explored the effects of gate work function variation (WFV) through device simulation on a fin-shaped silicon quantum dot device with a multi-gate configuration for a large-scale integrated array. The threshold voltage (V_th) of current–voltage characteristics is affected by WFV in both main and surrounding gates, indicating the existence of electrostatic coupling among these gates. The electrostatic coupling can be reduced by biasing on the surrounding gates. Furthermore, the concept of V_th, following conventional transistors, works as a reference of voltage and potential in the present multi-gate device. This knowledge contributes to establishing a practical method for the statistical analysis of qubit variability.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.