{"title":"低工作电压的溅射沉积碘化铜薄膜晶体管","authors":"","doi":"10.1016/j.sse.2024.109014","DOIUrl":null,"url":null,"abstract":"<div><div>This paper reports on a back-gated p-type thin film transistor (TFT) with copper iodide (CuI) as the channel material, a HfO<sub>2</sub> gate dielectric layer, and Al<sub>2</sub>O<sub>3</sub> passivation. The γ-CuI channel was deposited from a CuI target using DC magnetron sputtering at room temperature. Our TFT can be fully shut off by V<sub>G</sub> = 4 V, with a field-effect channel hole mobility μ<sub>h</sub> ∼ 1.5–2 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>. An anneal in forming gas was performed twice, once at 200 °C, then at 250 °C to improve gate control, yielding a final I<sub>on</sub>/I<sub>off</sub> current ratio of ∼ 250. The anneal served two purposes: to reduce the oxygen acceptor density in the CuI channel and reduce the concentration of interface states between the CuI, Al<sub>2</sub>O<sub>3</sub> passivation, and HfO<sub>2</sub>. A model of the device was built in an industrial TCAD simulator, which reproduces the measured characteristics and allows an estimation of interface state densities and channel doping.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sputter-Deposited copper iodide thin film transistors with low Operating voltage\",\"authors\":\"\",\"doi\":\"10.1016/j.sse.2024.109014\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This paper reports on a back-gated p-type thin film transistor (TFT) with copper iodide (CuI) as the channel material, a HfO<sub>2</sub> gate dielectric layer, and Al<sub>2</sub>O<sub>3</sub> passivation. The γ-CuI channel was deposited from a CuI target using DC magnetron sputtering at room temperature. Our TFT can be fully shut off by V<sub>G</sub> = 4 V, with a field-effect channel hole mobility μ<sub>h</sub> ∼ 1.5–2 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>. An anneal in forming gas was performed twice, once at 200 °C, then at 250 °C to improve gate control, yielding a final I<sub>on</sub>/I<sub>off</sub> current ratio of ∼ 250. The anneal served two purposes: to reduce the oxygen acceptor density in the CuI channel and reduce the concentration of interface states between the CuI, Al<sub>2</sub>O<sub>3</sub> passivation, and HfO<sub>2</sub>. A model of the device was built in an industrial TCAD simulator, which reproduces the measured characteristics and allows an estimation of interface state densities and channel doping.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001631\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001631","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Sputter-Deposited copper iodide thin film transistors with low Operating voltage
This paper reports on a back-gated p-type thin film transistor (TFT) with copper iodide (CuI) as the channel material, a HfO2 gate dielectric layer, and Al2O3 passivation. The γ-CuI channel was deposited from a CuI target using DC magnetron sputtering at room temperature. Our TFT can be fully shut off by VG = 4 V, with a field-effect channel hole mobility μh ∼ 1.5–2 cm2 V−1 s−1. An anneal in forming gas was performed twice, once at 200 °C, then at 250 °C to improve gate control, yielding a final Ion/Ioff current ratio of ∼ 250. The anneal served two purposes: to reduce the oxygen acceptor density in the CuI channel and reduce the concentration of interface states between the CuI, Al2O3 passivation, and HfO2. A model of the device was built in an industrial TCAD simulator, which reproduces the measured characteristics and allows an estimation of interface state densities and channel doping.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.